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    CHAMBER IMPEDANCE MANAGEMENT IN A PROCESSING CHAMBER
    1.
    发明公开
    CHAMBER IMPEDANCE MANAGEMENT IN A PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20240194446A1

    公开(公告)日：2024-06-13

    申请号：US18063888

    申请日：2022-12-09

    Applicant: Applied Materials, Inc.

    Inventor： Linying CUI ,  James ROGERS ,  Keith HERNANDEZ ,  William CHIN ,  Leonid DORF

    IPC: H01J37/32

    CPC classification number: H01J37/32155 ,  H01J37/32128 ,  H01J37/32568 ,  H01J2237/024 ,  H01J2237/24507 ,  H01J2237/334

    Abstract: Embodiments of the disclosure include an apparatus and a method for controlling plasma uniformity by controlling plasma density in the bulk plasma over the center region and circumferential edge region of the substrate. Plasma uniformity can be controlled by use of an RF tuning circuit coupled to one of a plurality of electrodes positioned relative to a substrate during plasma processing. By adjusting the electrical characteristics of at least one of the RF tuning circuits, the effect that the generated RF fundamental frequency and related RF harmonic frequencies have on the plasma processing results can be controlled. Beneficially, the use of one or more of the tuning circuits and methods of using the same may be used to provide individual tuning knobs for controlling reactive neutral species concentration, ion energy and angular distribution, ion directionality and directionality uniformity, and separately controlling ion flux and reactive neutral species uniformity across the surface of the substrate.

    PLASMA PROCESSING APPARATUS
    2.
    发明公开
    PLASMA PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20240047184A1

    公开(公告)日：2024-02-08

    申请号：US18359163

    申请日：2023-07-26

    Applicant: Tokyo Electron Limited

    Inventor： Kazuki MOYAMA ,  Yuzuru SAKAI

    IPC: H01J37/32

    CPC classification number: H01J37/32834 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/024

    Abstract: A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a movable member and a stationary member each disposed around the substrate support, the movable member having a plurality of moving blades, the plurality of moving blades being rotatable, the stationary member having a plurality of stationary blades, the plurality of moving blades and the plurality of stationary blades being alternately disposed along a height direction of the plasma processing chamber, and an exhaust space being formed beneath the movable member and the stationary member; a first driver configured to rotate the movable member; a pressure regulating member movably disposed around the substrate support and above the movable member and the stationary member; and a second driver configured to move the pressure regulating member.

    HIGH PRECISION EDGE RING CENTERING FOR SUBSTRATE PROCESSING SYSTEMS
    3.
    发明公开
    HIGH PRECISION EDGE RING CENTERING FOR SUBSTRATE PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20230369025A1

    公开(公告)日：2023-11-16

    申请号：US17912990

    申请日：2020-03-23

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Hui Ling HAN ,  Seetharaman RAMACHANDRAN ,  Marc ESTOQUE

    IPC: H01J37/32 ,  H01L21/68

    CPC classification number: H01J37/32642 ,  H01L21/681 ,  H01J2237/24578 ,  H01J2237/024

    Abstract: An edge ring centering system for a plasma processing system includes a processing chamber including a substrate support and R edge ring lift pins, where R is an integer greater than or equal to 3. An edge ring includes P grooves located on a bottom surface thereof, where P is an integer greater than or equal to R. A robot arm includes an end effector. A controller is configured to cause the optical sensor to sense a first position of the edge ring on the end effector; cause the robot arm to deliver the edge ring to a first center location on the edge ring lift pins; retrieve the edge ring from the edge ring lift pins; and cause the optical sensor to sense a second position of the edge ring on the end effector.

    Aligning a featureless thin film in a TEM
    8.
    发明授权
    Aligning a featureless thin film in a TEM 有权
    在TEM中对齐无特征薄膜

    公开(公告)号：US09583303B2

    公开(公告)日：2017-02-28

    申请号：US14878513

    申请日：2015-10-08

    Applicant: FEI Company

    Inventor： Bart Buijsse ,  Gijs van Duinen

    IPC: H01J37/26 ,  H01J37/02 ,  H01J37/153

    CPC classification number: H01J37/023 ,  H01J37/153 ,  H01J37/26 ,  H01J37/261 ,  H01J2237/024 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/2602 ,  H01J2237/2614

    Abstract: When preparing a Hole-Free Phase Plates (HFPP) a preferably featureless thin film should be placed with high accuracy in the diffraction plane of the TEM, or a plane conjugate to it. Two methods for accurately placing the thin film in said plane are described. One method uses a Ronchigram of the thin film while the TEM is in imaging mode, and the magnification of the Ronchigram is tuned so that the magnification in the middle of the Ronchigram is infinite. The second method uses electrons scattered by the thin film while the TEM is in diffraction mode. When the thin film does not coincide with the diffraction plane, electrons scattered by the thin film seem to originate from another location than the cross-over of the zero beam. This is observed as a halo. The absence of the halo is proof that the thin film coincides with the diffraction plane.

    Abstract translation: 当准备无孔相板（HFPP）时，应该在TEM的衍射平面或与其共轭的平面上以高精度放置优选无特征薄膜。 描述了将薄膜准确地放置在所述平面中的两种方法。 当TEM处于成像模式时，一种方法使用薄膜的Ronchigram，并且调整Ronchigram的放大倍率，使得Ronchigram中间的放大倍率是无穷大的。 第二种方法是在TEM处于衍射模式时使用由薄膜散射的电子。 当薄膜与衍射平面不一致时，由薄膜散射的电子似乎源自与零光束交叉的另一位置。 这被观察为光环。 光晕的不存在证明薄膜与衍射平面重合。

    LOWER DOSE RATE ION IMPLANTATION USING A WIDER ION BEAM
    9.
    发明申请
    LOWER DOSE RATE ION IMPLANTATION USING A WIDER ION BEAM 有权
    使用更宽的离子束降低剂量离子植入

    公开(公告)号：US20150371857A1

    公开(公告)日：2015-12-24

    申请号：US14312617

    申请日：2014-06-23

    Applicant: Advanced Ion Beam Technology, Inc.

    Inventor： Zhimin WAN ,  Rekha PADMANABHAN ,  Xiao BAI ,  Gary N. CAI ,  Ching-I LI ,  Ger-Pin LIN ,  Shao-Yu HU ,  David HOGLUND ,  Robert E. KAIM ,  Kourosh SAADATMAND

    IPC: H01L21/265

    CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

    Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

    Abstract translation: 在用于工件的较低剂量率离子注入的示例性过程中，可以使用离子源和提取操纵器来产生离子束。 提取操纵器可以位于离离子源的出口孔的间隙距离处。 当提取操纵器定位在与出射孔的最佳间隙距离处时，离开提取操纵器的离子束的电流可以最大化。 提取操纵器从出口孔定位的间隙距离可以不同于最佳间隙距离至少10％。 可以将第一电位施加到第一组电极。 当离子束通过第一组电极时，离子束的x维度可能增加。 工件可以位于离子束中以将离子注入到工件中。

    ENCLOSURE FOR A TARGET PROCESSING MACHINE
    10.
    发明申请
    ENCLOSURE FOR A TARGET PROCESSING MACHINE 审中-公开
    目标加工机的外壳

    公开(公告)号：US20150321356A1

    公开(公告)日：2015-11-12

    申请号：US14705928

    申请日：2015-05-06

    Applicant: Mapper Lithography IP B.V.

    Inventor： Joep Gerard Vijverberg ,  Laurens Vincent Plandsoen ,  Bas van Gelder ,  Guido de Boer ,  Michel Pieter Dansberg

    IPC: B25J11/00 ,  G03F9/00

    CPC classification number: B25J11/00 ,  G03F7/7075 ,  G03F7/70808 ,  G03F7/70841 ,  G03F9/7096 ,  H01J37/16 ,  H01J37/3177 ,  H01J2237/024 ,  H01J2237/166 ,  H01L21/6719 ,  H01L21/67225 ,  H01L21/67775

    Abstract: The invention relates to an assembly for enclosing a target processing machine. The assembly comprises an enclosure and a transfer unit. The enclosure comprises a base plate for arranging said target processing machine thereon, side wall panels, which are fixed to said base plate, and a top wall panel which is fixed to said side wall panels. In addition, the enclosure comprises an access opening in a side wall of the enclosure. The transfer unit comprising one or more transfer elements for moving the transfer unit with respect to the base plate. The transfer unit further comprises a door panel which is arranged for closing the access opening, wherein the door panel is movably mounted to the transfer unit by means of a flexible coupling which allows a movement of the door panel with respect to the transfer unit at least in a direction towards and/or away from the enclosure.

    Abstract translation: 本发明涉及用于封闭目标加工机器的组件。 组件包括外壳和转移单元。 外壳包括用于在其上布置所述目标加工机的基板，固定到所述基板的侧壁板和固定到所述侧壁板的顶壁板。 此外，外壳包括在外壳的侧壁中的进入开口。 转印单元包括用于相对于基板移动转印单元的一个或多个转印元件。 传送单元还包括门板，其被布置成用于关闭进入开口，其中门板通过柔性联接件可移动地安装到传送单元，该柔性联接器允许门板相对于传送单元至少移动 在朝向和/或远离外壳的方向上。

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