公开(公告)号：US11840764B2

公开(公告)日：2023-12-12

申请号：US17569827

申请日：2022-01-06

申请人： HYUNDAI MOBIS CO., LTD.

发明人： Hyoung Taek Kang ,  Hyeon Don Kim ,  Keun Hyung Lee

IPC分类号： C23C28/04 ,  C09D1/04 ,  C03C17/34 ,  C23C28/00 ,  B32B17/06 ,  C23C14/58 ,  C23C14/34

CPC分类号： C23C28/42 ,  B32B17/06 ,  C09D1/04 ,  C23C14/34 ,  C23C14/5833 ,  C23C28/042 ,  C23C28/048

摘要： The present disclosure relates to a laminate and a method for preparing the same. The laminate comprises a substrate, a coating layer, and a water-repellent layer sequentially laminated, the coating layer comprises a first coating layer and a second coating layer laminated one or more times alternately, the first coating layer comprises at least one metal oxide selected from a group consisting of a lanthanide metal oxide, a transition metal oxide, and a composite metal oxide comprising lanthanum metal and transition metal, the second coating layer comprises an alkaline earth metal fluoride and a transition metal oxide.

公开(公告)号：US11802349B2

公开(公告)日：2023-10-31

申请号：US17016614

申请日：2020-09-10

申请人： Applied Materials, Inc.

发明人： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Yong Cao ,  Shumao Zhang ,  Zhebo Chen ,  Jean Lu ,  Daniel Lee Diehl ,  Xianmin Tang

IPC分类号： C23C14/58 ,  C23C14/34 ,  C23C14/54 ,  C23C14/06 ,  C30B23/00 ,  C30B29/40 ,  C30B33/04

CPC分类号： C30B23/002 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/54 ,  C23C14/5833 ,  C30B29/403 ,  C30B33/04

摘要： Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

公开(公告)号：US09899050B2

公开(公告)日：2018-02-20

申请号：US15376043

申请日：2016-12-12

申请人： Seagate Technology LLC

发明人： Jiaoming Qiu ,  Yonghua Chen ,  Ganping Ju ,  Thomas P. Nolan

IPC分类号： G11B5/84 ,  G11B5/85 ,  C21D1/26 ,  B32B15/01 ,  C22C5/04 ,  C22F1/14 ,  C23C14/16 ,  C23C14/34 ,  C23C14/35 ,  C23C14/22 ,  C23C14/28 ,  C23C14/58 ,  G11B5/65 ,  G11B5/73 ,  G11B5/851

CPC分类号： G11B5/85 ,  B32B15/01 ,  B32B15/017 ,  B32B15/018 ,  B32B2307/208 ,  B32B2307/706 ,  B32B2457/00 ,  C21D1/26 ,  C21D8/12 ,  C21D9/0068 ,  C21D2211/004 ,  C21D2281/02 ,  C22C5/04 ,  C22C30/00 ,  C22C38/002 ,  C22F1/14 ,  C23C14/165 ,  C23C14/221 ,  C23C14/28 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/5806 ,  C23C14/5833 ,  C23C14/5873 ,  G11B5/647 ,  G11B5/65 ,  G11B5/653 ,  G11B5/66 ,  G11B5/732 ,  G11B5/84 ,  G11B5/851

摘要： One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L10 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe50Pt50 adjacent a lower portion of the structure proximate the substrate to Fe>50Pt

公开(公告)号：US20170250055A1

公开(公告)日：2017-08-31

申请号：US15595773

申请日：2017-05-15

申请人： FEI Company

发明人： Paul Keady ,  Brennan Peterson ,  Guus Das ,  Craig Matthew Henry ,  Larry Dworkin ,  Jeff Blackwood ,  Stacey Stone ,  Michael Schmidt

IPC分类号： H01J37/305 ,  H01J37/20 ,  H01J37/28

CPC分类号： H01J37/3056 ,  C23C14/5833 ,  C23F1/02 ,  G01N1/32 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3005 ,  H01J2237/024 ,  H01J2237/20207 ,  H01J2237/31745 ,  H01J2237/31749

摘要： A method for TEM sample preparation and analysis that can be used in a FIB-SEM system without re-welds, unloads, user handling of the lamella, or a motorized flip stage. The method allows a dual beam FIB-SEM system with a typical tilt stage to be used to extract a sample to from a substrate, mount the sample onto a TEM sample holder capable of tilting, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to an electron column for STEM imaging.

公开(公告)号：US20170092317A1

公开(公告)日：2017-03-30

申请号：US15376043

申请日：2016-12-12

申请人： Seagate Technology LLC

发明人： Jiaoming Qui ,  Yonghua Chen ,  Ganping Ju ,  Thomas P. Nolan

IPC分类号： G11B5/85 ,  C22C5/04 ,  C22F1/14 ,  C23C14/16 ,  C23C14/34 ,  G11B5/851 ,  C23C14/22 ,  C23C14/28 ,  C23C14/58 ,  G11B5/65 ,  G11B5/73 ,  B32B15/01 ,  C23C14/35

CPC分类号： G11B5/85 ,  B32B15/01 ,  B32B15/017 ,  B32B15/018 ,  B32B2307/208 ,  B32B2307/706 ,  B32B2457/00 ,  C21D1/26 ,  C21D8/12 ,  C21D9/0068 ,  C21D2211/004 ,  C21D2281/02 ,  C22C5/04 ,  C22C30/00 ,  C22C38/002 ,  C22F1/14 ,  C23C14/165 ,  C23C14/221 ,  C23C14/28 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/5806 ,  C23C14/5833 ,  C23C14/5873 ,  G11B5/647 ,  G11B5/65 ,  G11B5/653 ,  G11B5/66 ,  G11B5/732 ,  G11B5/84 ,  G11B5/851

摘要： One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L10 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe50Pt50 adjacent a lower portion of the structure proximate the substrate to Fe>50Pt

公开(公告)号：US09564360B2

公开(公告)日：2017-02-07

申请号：US15164625

申请日：2016-05-25

申请人： CANON ANELVA CORPORATION

发明人： Hiroshi Akasaka ,  Masayoshi Ikeda ,  Kazuhiro Kimura ,  Yasushi Kamiya ,  Tomohiko Toyosato

IPC分类号： H01L21/768 ,  C23C14/04 ,  C23C14/58 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  C23C16/56

CPC分类号： H01L21/76865 ,  C23C14/046 ,  C23C14/5833 ,  C23C14/5873 ,  C23C16/56 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76877 ,  H01L29/66545 ,  H01L29/7843

摘要： An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

摘要翻译： 本发明的目的是提供一种能够使材料完全嵌入到具有留在凹部中的沉积膜的凹部中的方法。 一个实施例中的方法包括：第一照射步骤，用相对于基板在面内方向上以具有第一角度的方向，以粒子束照射形成在基板的凹部的开口部上的沉积膜， 在厚度方向上去除部分沉积膜; 以及第二照射步骤，在所述第一照射步骤之后，沿着与所述基板的垂直于所述基板的平面内方向的第二角度的方向上的所述粒子束照射所述沉积膜比所述第一角度， 剩余的沉积膜在厚度方向上。

公开(公告)号：US20160177451A1

公开(公告)日：2016-06-23

申请号：US15055660

申请日：2016-02-29

申请人： SHINCRON CO., LTD.

发明人： Ichiro SHIONO ,  Ekishu NAGAE ,  Yousong JIANG ,  Takuya SUGAWARA

IPC分类号： C23C16/56 ,  C09D5/00 ,  C09D1/00

CPC分类号： C23C16/56 ,  C03C17/42 ,  C03C2217/76 ,  C03C2217/77 ,  C03C2218/32 ,  C09D1/00 ,  C09D5/00 ,  C23C14/0652 ,  C23C14/08 ,  C23C14/12 ,  C23C14/22 ,  C23C14/221 ,  C23C14/24 ,  C23C14/541 ,  C23C14/5833 ,  Y10T428/265

摘要： The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

摘要翻译： 本发明的膜的沉积方法包括在基板101的表面上沉积具有高于基板101的硬度的硬度的第一膜103的第一膜沉积步骤，在基板101的表面上照射具有能量的颗粒的第一照射步骤 第一膜103，以及在经受第一照射步骤的第一膜103的表面上沉积防油膜105的第二膜沉积步骤。 根据本发明，可以提供一种用于沉积能够生产防油衬底的膜的方法，该方法包括具有实际足够水平的耐磨性的拒油膜。

公开(公告)号：US09318306B2

公开(公告)日：2016-04-19

申请号：US14137807

申请日：2013-12-20

申请人： Intermolecular, Inc.

发明人： Owen Fong ,  Timothy Franklin ,  Stephen Charles Garner ,  James Tsung

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01J37/32 ,  C23C14/04 ,  C23C14/35 ,  C23C14/58

CPC分类号： H01J37/34 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/04 ,  C23C14/3407 ,  C23C14/3442 ,  C23C14/351 ,  C23C14/352 ,  C23C14/5826 ,  C23C14/5833 ,  C23C14/5846 ,  H01J37/32 ,  H01J37/32798 ,  H01J37/32935 ,  H01J2237/332

摘要： In some embodiments, apparatus are provided that provide for flexible processing in both high productivity combinatorial (HPC) and full wafer modes. The apparatus allow for interchangeable functionality that includes deposition with different sizes of targets, plasma treatment, ion beam treatment, and in-situ metrology. The functional modules are designed so that the modules may be interchanged with minimal effort and reduced system downtime.

摘要翻译： 在一些实施例中，提供了提供高生产率组合（HPC）和全晶片模式中的灵活处理的装置。 该装置允许可互换的功能，包括具有不同尺寸靶的沉积，等离子体处理，离子束处理和原位计量。 功能模块的设计使得模块可以以最小的努力互换，并减少系统停机时间。

公开(公告)号：US20150176117A1

公开(公告)日：2015-06-25

申请号：US14137807

申请日：2013-12-20

申请人： Intermolecular, Inc.

发明人： Owen Fong ,  Timothy Franklin ,  Stephen Charles Garner ,  James Tsung

IPC分类号： C23C14/46 ,  H01J37/34

CPC分类号： H01J37/34 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C14/04 ,  C23C14/3407 ,  C23C14/3442 ,  C23C14/351 ,  C23C14/352 ,  C23C14/5826 ,  C23C14/5833 ,  C23C14/5846 ,  H01J37/32 ,  H01J37/32798 ,  H01J37/32935 ,  H01J2237/332

摘要： In some embodiments, apparatus are provided that provide for flexible processing in both high productivity combinatorial (HPC) and full wafer modes. The apparatus allow for interchangeable functionality that includes deposition with different sizes of targets, plasma treatment, ion beam treatment, and in-situ metrology. The functional modules are designed so that the modules may be interchanged with minimal effort and reduced system downtime.

摘要翻译： 在一些实施例中，提供了提供高生产率组合（HPC）和全晶片模式中的灵活处理的装置。 该装置允许可互换的功能，包括具有不同尺寸靶的沉积，等离子体处理，离子束处理和原位计量。 功能模块的设计使得模块可以以最小的努力互换，并减少系统停机时间。

公开(公告)号：US20140127580A1

公开(公告)日：2014-05-08

申请号：US14112262

申请日：2012-06-26

申请人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

发明人： Kevin Scott Jones ,  Bradley Robert Yates ,  Blake Leonardl Darby

IPC分类号： H01M4/38 ,  H01M4/1395 ,  H01M4/04

CPC分类号： H01M4/0402 ,  C23C14/06 ,  C23C14/5833 ,  H01M4/0423 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/661

摘要： Embodiments of the present disclosure provide for a structure, methods of making the structure, methods of using the structure, and the like. In particular, the structure includes a porous germanium layer, where the porous germanium layer includes a porous network that improves the performance of the structure.

摘要翻译： 本公开的实施例提供了结构，制造结构的方法，使用该结构的方法等。 特别地，该结构包括多孔锗层，其中多孔锗层包括改善结构性能的多孔网络。