公开(公告)号：US11550222B2

公开(公告)日：2023-01-10

申请号：US16890867

申请日：2020-06-02

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Lifan Yan ,  Abhijit B. Mallick ,  Daniel Lee Diehl ,  Ho-yung Hwang ,  Jothilingam Ramalingam

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  G03F7/20

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

公开(公告)号：US11495461B2

公开(公告)日：2022-11-08

申请号：US16800351

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Suketu Arun Parikh ,  Daniel Lee Diehl ,  Michael Anthony Stolfi ,  Jothilingam Ramalingam ,  Yong Cao ,  Lifan Yan ,  Chi-I Lang ,  Hoyung David Hwang

IPC: H01L21/033 ,  H01L21/311

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

公开(公告)号：US10096725B2

公开(公告)日：2018-10-09

申请号：US14531549

申请日：2014-11-03

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Daniel Lee Diehl ,  Rongjun Wang ,  Xianmin Tang ,  Tai-chou Papo Chen ,  Tingjun Xu

IPC: C23C14/35 ,  H01L31/0216 ,  H01L31/18 ,  G02B1/115 ,  C23C14/00 ,  C23C14/06

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

公开(公告)号：US09337051B2

公开(公告)日：2016-05-10

申请号：US14799374

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Bok Hoen Kim ,  Deenesh Padhi ,  Li Yan Miao ,  Pramit Manna ,  Christopher Dennis Bencher ,  Mehul B. Naik ,  Huixiong Dai ,  Christopher S. Ngai ,  Daniel Lee Diehl

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。 本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除 保形碳层，光致抗蚀剂等碳质成分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。

公开(公告)号：US09177796B2

公开(公告)日：2015-11-03

申请号：US14269010

申请日：2014-05-02

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Daniel Lee Diehl ,  Huixiong Dai ,  Yong Cao ,  Tingjun Xu ,  Weimin Zeng ,  Peng Xie

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  C23C14/00 ,  C23C14/06

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

公开(公告)号：US11802349B2

公开(公告)日：2023-10-31

申请号：US17016614

申请日：2020-09-10

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Yong Cao ,  Shumao Zhang ,  Zhebo Chen ,  Jean Lu ,  Daniel Lee Diehl ,  Xianmin Tang

IPC: C23C14/58 ,  C23C14/34 ,  C23C14/54 ,  C23C14/06 ,  C30B23/00 ,  C30B29/40 ,  C30B33/04

CPC classification number: C30B23/002 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/54 ,  C23C14/5833 ,  C30B29/403 ,  C30B33/04

Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

公开(公告)号：US20220384705A1

公开(公告)日：2022-12-01

申请号：US17883508

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L39/24 ,  H01L39/12 ,  H01L39/22 ,  C23C14/54 ,  C23C14/34

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US20210328104A1

公开(公告)日：2021-10-21

申请号：US17362794

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01L33/00 ,  H01J37/32 ,  H01L29/20

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20200303616A1

公开(公告)日：2020-09-24

申请号：US16823206

申请日：2020-03-18

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L39/24 ,  H01L39/12 ,  H01L39/22 ,  C23C14/34 ,  C23C14/54

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US10109481B2

公开(公告)日：2018-10-23

申请号：US14410790

申请日：2013-07-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Vivek Agrawal ,  Anantha Subramani ,  Daniel Lee Diehl ,  Xianmin Tang

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/322 ,  H01J37/34 ,  C23C14/00 ,  C23C14/06

Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.