公开(公告)号：US20230395356A1

公开(公告)日：2023-12-07

申请号：US17834278

申请日：2022-06-07

Applicant: Applied Materials, Inc.

Inventor： Anantha Subramani ,  Yang Guo ,  Seyyed Fazeli ,  Kelvin Chan ,  Chandrashekara Baginagere ,  Brian Alvarez ,  Philip Kraus

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32247 ,  C23C16/45536 ,  C23C16/4584 ,  H01J2237/162 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/332

Abstract: A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.

公开(公告)号：US11551905B2

公开(公告)日：2023-01-10

申请号：US15925739

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Yaoling Pan ,  Vijaykumar Krithivasan ,  Shimin Mao ,  Kelvin Chan ,  Michael D. Willwerth ,  Anantha Subramani ,  Ashish Goel ,  Chih-shun Lu ,  Philip Allan Kraus ,  Patrick John Tae ,  Leonard Tedeschi

IPC: H01J37/244 ,  H01L21/67 ,  H01L41/047 ,  H01L41/053 ,  H01L41/29 ,  H01L41/04 ,  H01J37/32 ,  H01L41/31

Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

公开(公告)号：US11011676B2

公开(公告)日：2021-05-18

申请号：US15183594

申请日：2016-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L33/06 ,  H01L33/12 ,  H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

公开(公告)号：US10903067B2

公开(公告)日：2021-01-26

申请号：US16695793

申请日：2019-11-26

Applicant: Applied Materials, Inc.

Inventor： Ashish Goel ,  Anantha Subramani ,  Maurice E. Ewert

IPC: C23C16/48 ,  H01J37/32 ,  H01L21/02 ,  C23C14/54 ,  H01L21/67

Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

公开(公告)号：US10763143B2

公开(公告)日：2020-09-01

申请号：US15681263

申请日：2017-08-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Shimin Mao ,  Simon Huang ,  Ashish Goel ,  Anantha Subramani ,  Philip Allan Kraus

IPC: B05C11/00 ,  B05C13/00 ,  C23C16/52 ,  C23C14/54 ,  H01L21/67

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

公开(公告)号：US10546973B2

公开(公告)日：2020-01-28

申请号：US16265895

申请日：2019-02-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01L33/00 ,  H01J37/32 ,  H01L29/20

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20190172973A1

公开(公告)日：2019-06-06

申请号：US16265895

申请日：2019-02-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/32 ,  H01L33/00 ,  H01L31/18 ,  H01J37/34 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20190057889A1

公开(公告)日：2019-02-21

申请号：US15681263

申请日：2017-08-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Shimin Mao ,  Simon Huang ,  Ashish Goel ,  Anantha Subramani ,  Philip Allan Kraus

IPC: H01L21/67 ,  C23C16/52

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

公开(公告)号：US08765601B2

公开(公告)日：2014-07-01

申请号：US13956969

申请日：2013-08-01

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

IPC: H01L21/283 ,  B82Y40/00

CPC classification number: H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

Abstract translation: 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

公开(公告)号：US20230282506A1

公开(公告)日：2023-09-07

申请号：US17685272

申请日：2022-03-02

Applicant: Applied Materials, Inc.

Inventor： Anantha Subramani ,  Yang Guo ,  Seyyed Fazeli ,  Ramcharan Sundar ,  Arun Kumar Kotrappa

IPC: H01L21/683 ,  H01J37/32 ,  C23C14/28 ,  C23C14/50

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  C23C14/28 ,  C23C14/505 ,  H01J2237/2007 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/332

Abstract: Embodiments disclosed herein include an electrostatic chuck. In an embodiment, the electrostatic chuck comprises a pedestal with a support surface for supporting a substrate and a second surface opposite from the support surface, and chucking electrode within the pedestal. In an embodiment, a biasing electrode is within the pedestal, and a heating element is within the pedestal. In an embodiment, the electrostatic chuck further comprises a shaft coupled to the second surface of the pedestal, and a rotation assembly coupled to the shaft to rotate the shaft and the pedestal.