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    Process kit shield for plasma enhanced processing chamber
    2.
    发明授权
    Process kit shield for plasma enhanced processing chamber 有权
    用于等离子体增强处理室的工艺套件屏蔽

    公开(公告)号：US09343274B2

    公开(公告)日：2016-05-17

    申请号：US14178146

    申请日：2014-02-11

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Muhammad Rasheed ,  Donny Young ,  Kirankumar Savandaiah ,  Uday Pai

    IPC: C23C14/56 ,  C23C14/34 ,  C23C16/44 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  H01J19/54

    CPC classification number: H01J37/3411 ,  C23C14/34 ,  C23C14/35 ,  C23C14/564 ,  C23C16/44 ,  H01J19/54 ,  H01J37/32495 ,  Y10T428/12528

    Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

    Abstract translation: 本文公开了用于处理衬底的设备。 在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件 以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的所述第一端被配置为与 处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

    Multi-zone showerhead
    3.
    发明授权
    Multi-zone showerhead 有权

    公开(公告)号：US11944988B2

    公开(公告)日：2024-04-02

    申请号：US16415665

    申请日：2019-05-17

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Muhannad Mustafa ,  Muhammad Rasheed

    IPC: B05B1/18 ,  B05B7/08 ,  H01L21/67

    CPC classification number: B05B1/18 ,  B05B7/08 ,  H01L21/67017

    Abstract: Embodiments of multi-zone showerheads are provided herein. In some embodiments, a multi-zone showerhead includes: a body having an outer surface and including a plurality of fluidly independent plenums; and a plurality of gas distribution plugs extending through the body, wherein at least one gas distribution plug includes a first internal gas passageway coupling a first plenum of the plurality of fluidly independent plenums to the outer surface and a second internal gas passageway coupling a second plenum of the plurality of fluidly independent plenums to the outer surface. In some embodiments, the body can include: a top plate; a bottom plate; and one or more intermediate plates disposed between the top plate and the bottom plate, wherein individual plenums of the plurality of fluidly independent plenums are respectively defined between adjacent plates of the top plate, the bottom plate, and the one or more intermediate plates.

    PVD target for self-centering process shield
    6.
    发明授权
    PVD target for self-centering process shield 有权
    PVD定位自动对中过程屏蔽

    公开(公告)号：US09534286B2

    公开(公告)日：2017-01-03

    申请号：US13837742

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Goichi Yoshidome ,  Ryan Hanson ,  Donny Young ,  Muhammad Rasheed ,  Keith A. Miller

    IPC: C23C14/34 ,  H01J37/34

    CPC classification number: C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  Y10T428/218 ,  Y10T428/219

    Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

    Abstract translation: 在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面， 第一边 目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 沿着所述背板的第一侧面延伸到所述背板的所述第二侧面的沿着所述背板的外周设置的多个槽，其中所述多个槽被配置成相对于所述工艺防护罩对准所述目标组件。

    Method and apparatus for measuring pressure in a physical vapor deposition chamber
    7.
    发明授权
    Method and apparatus for measuring pressure in a physical vapor deposition chamber 有权
    用于测量物理气相沉积室中的压力的​​方法和装置

    公开(公告)号：US09177763B2

    公开(公告)日：2015-11-03

    申请号：US13837064

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Muhammad Rasheed ,  Alan A. Ritchie ,  Isaac Porras ,  Keith A. Miller

    IPC: H01J37/244 ,  H01J37/32 ,  H01J37/34

    CPC classification number: H01J37/32816 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3441

    Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

    Abstract translation: 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于测量基板处理室的压力的装置可以包括具有环形一体式主体的屏蔽件，该主体具有内部容积，顶部开口和底部开口，其中环形单件主体的底部包括 内部向上延伸的U形部分，围绕屏蔽的外壁布置的气体注入适配器，形成在气体注入适配器内的压力测量导管，其中压力测量导管经由形成在外部 所述屏蔽壁和衬底处理室部件设置在所述屏蔽件附近，并且其中所述间隙具有与所述内部容积基本上相同的压力，以及联接到所述压力测量导管的压力检测器。

    Process kit shield for improved particle reduction
    9.
    发明授权
    Process kit shield for improved particle reduction 有权

    公开(公告)号：US10718049B2

    公开(公告)日：2020-07-21

    申请号：US15830924

    申请日：2017-12-04

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Muhammad Rasheed ,  Rongjun Wang ,  Zhendong Liu ,  Xinyu Fu ,  Xianmin Tang

    IPC: C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

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