公开(公告)号：US11961723B2

公开(公告)日：2024-04-16

申请号：US16222662

申请日：2018-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： David Gunther ,  Cheng-Hsiung Tsai ,  Kirankumar Neelasandra Savandaiah

IPC: H01J37/34 ,  C23C14/50 ,  C23C14/56 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01J37/3441 ,  C23C14/50 ,  C23C14/564 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32651 ,  H01J37/32724 ,  H01J37/3411

Abstract: Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

公开(公告)号：US20230029265A1

公开(公告)日：2023-01-26

申请号：US17384096

申请日：2021-07-23

Applicant: Applied Materials, Inc.

Inventor： Xi Chen ,  Shreesha Yogish Rao ,  Sheng Guo ,  Chi H. Ching ,  Thomas Blasius Brezoczky ,  Cheng-Hsiung Tsai

IPC: B08B7/00 ,  H01J37/32 ,  B08B13/00

Abstract: Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.

公开(公告)号：USD1040304S1

公开(公告)日：2024-08-27

申请号：US29796739

申请日：2021-06-25

Applicant: APPLIED MATERIALS, INC.

Designer： David Gunther ,  Cheng-Hsiung Tsai ,  Kirankumar Neelasandra Savandaiah

Abstract: FIG. 1 is a perspective view of a deposition ring for a physical vapor deposition chamber, according to the novel design.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a front elevation view thereof.
FIG. 5 is a back elevation view thereof.
FIG. 6 is a left side elevation view thereof.
FIG. 7 is a right side elevation view thereof; and,
FIG. 8 is a cross-sectional view taken along line 8-8 in FIG. 2.
The dashed lines in FIGS. 1-8 represent unclaimed environment forming no part of the claimed design.

公开(公告)号：US11955362B2

公开(公告)日：2024-04-09

申请号：US15703961

申请日：2017-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Joel M Huston ,  Cheng-Hsiung Tsai ,  Gwo-Chuan Tzu

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01L21/78

CPC classification number: H01L21/6835 ,  H01L21/67098 ,  H01L21/6719 ,  H01L21/67751 ,  H01L21/6875 ,  H01L21/68757 ,  H01L21/78 ,  H01L21/67109 ,  H01L21/6831

Abstract: Embodiments of substrate supports and process chambers equipped with the same are provided. In some embodiments, a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; and one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface. Methods of eliminating backside wafer damage are also disclosed.

公开(公告)号：US11629409B2

公开(公告)日：2023-04-18

申请号：US16424302

申请日：2019-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Ribhu Gautam ,  Ananthkrishna Jupudi ,  Tuck Foong Koh ,  Preetham P. Rao ,  Vinodh Ramachandran ,  Yueh Sheng Ow ,  Yuichi Wada ,  Cheng-Hsiung Tsai ,  Kai Liang Liew

IPC: C23C16/511 ,  B01J19/12 ,  C23C16/54 ,  H05B6/64 ,  H01J37/32

Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

公开(公告)号：US10950475B1

公开(公告)日：2021-03-16

申请号：US16545537

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Vinodh Ramachandran ,  Ananthkrishna Jupudi ,  Cheng-Hsiung Tsai ,  Yueh Sheng Ow ,  Preetham P. Rao ,  Ribhu Gautam ,  Prashant Agarwal

IPC: H01L21/67 ,  H01L21/324 ,  H05B6/64 ,  H01L21/66 ,  G01J5/10

Abstract: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.

公开(公告)号：US12228395B2

公开(公告)日：2025-02-18

申请号：US17530538

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： Tomoharu Matsushita ,  Aravind Kamath ,  Jallepally Ravi ,  Cheng-Hsiung Tsai ,  Hiroyuki Takahama

IPC: G01B5/004 ,  H01L21/68 ,  H01L21/683 ,  B25J11/00

Abstract: Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

公开(公告)号：US11201078B2

公开(公告)日：2021-12-14

申请号：US15468509

申请日：2017-03-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Tomoharu Matsushita ,  Aravind Kamath ,  Jallepally Ravi ,  Cheng-Hsiung Tsai ,  Hiroyuki Takahama

IPC: H01L21/683 ,  G01L21/02 ,  H01L21/67

Abstract: Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

公开(公告)号：US11043406B2

公开(公告)日：2021-06-22

申请号：US16383772

申请日：2019-04-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Cheng-Hsiung Tsai ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: C23C14/50 ,  H01L21/687 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68

Abstract: Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.

公开(公告)号：US11011676B2

公开(公告)日：2021-05-18

申请号：US15183594

申请日：2016-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L33/06 ,  H01L33/12 ,  H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.