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公开(公告)号：US11961723B2
公开(公告)日：2024-04-16
申请号：US16222662
申请日：2018-12-17
IPC分类号： H01J37/34 , C23C14/50 , C23C14/56 , C23C16/458 , H01J37/32
CPC分类号： H01J37/3441 , C23C14/50 , C23C14/564 , C23C16/4585 , H01J37/32477 , H01J37/32651 , H01J37/32724 , H01J37/3411
摘要： Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.
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公开(公告)号：USD1007449S1
公开(公告)日：2023-12-12
申请号：US29782632
申请日：2021-05-07
设计人： David Gunther , Kirankumar Neelasandra Savandaiah , Jiao Song , Madan Kumar Shimoga Mylarappa , Yue Cui , Nuno Yen-Chu Chen , Mengxue Wu
摘要： FIG. 1 is a top perspective view of a sputtering target for a physical vapor deposition chamber, according to one embodiment of the novel design.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a right side elevation view thereof.
FIG. 5 is a left side elevation view thereof.
FIG. 6 is a front elevation thereof.
FIG. 7 is a back elevation view thereof; and,
FIG. 8 is an enlarged partial right side elevation view showing portions of the design in greater detail.
The dash-dash broken lines in FIGS. 1-8 represent unclaimed environment and form no part of the claimed design.
The short dash-dot lines on FIG. 4 and FIG. 8 depict the bounds of the region taken from FIG. 4 to be enlarged on FIG. 8 and form no part of the claimed design.-
公开(公告)号：USD940765S1
公开(公告)日：2022-01-11
申请号：US29760578
申请日：2020-12-02
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公开(公告)号：USD888903S1
公开(公告)日：2020-06-30
申请号：US29673685
申请日：2018-12-17
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公开(公告)号：US11846013B2
公开(公告)日：2023-12-19
申请号：US16945491
申请日：2020-07-31
发明人： David Gunther , Jiao Song , Kirankumar Neelasandra Savandaiah , Irena H. Wysok , Anthony Chih-Tung Chan
CPC分类号： C23C14/165 , C23C14/351 , C23C14/50 , C23C14/56 , H01J37/3455 , H01J37/3458 , H01L21/76898 , H01J37/3405
摘要： An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.
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公开(公告)号：US11692262B2
公开(公告)日：2023-07-04
申请号：US16930794
申请日：2020-07-16
发明人： Alexander Jansen , Keith A. Miller , Prashanth Kothnur , Martin Riker , David Gunther , Emily Schooley
CPC分类号： C23C14/354 , C23C14/3407 , C23C14/3471
摘要： Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.
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公开(公告)号：US20220341029A1
公开(公告)日：2022-10-27
申请号：US17861969
申请日：2022-07-11
发明人： Alexander Jansen , Keith A. Miller , Prashanth Kothnur , Martin Riker , David Gunther , Emily Schooley
摘要： Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.
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公开(公告)号：US11361982B2
公开(公告)日：2022-06-14
申请号：US16708908
申请日：2019-12-10
发明人： Kirankumar Neelasandra Savandaiah , William R. Johanson , David Gunther , Prashant Prabhakar Prabhu
IPC分类号： H01L21/68 , H01L21/683 , B08B3/12 , H01L21/67
摘要： Methods and apparatus for cleaning an electrostatic chuck (ESC) in a semiconductor chamber allow in-situ cleaning of the ESC. An apparatus may include an adapter or cover ring that is electrically isolated from a deposition ring; an annular grounding bracket mounted to and surrounding a pedestal, the annular grounding bracket has at least one horizontal grounding loop on an upper perimeter surface configured to provide electrical contact with the adapter or cover ring and to provide an RF return path to the ESC during plasma generation; and a bracket with a horizontal grounding loop on a first end to make electrical contact with the deposition ring and a vertical grounding loop on a second end to make electrical contact with a lift hoop which is electrically grounded, the bracket is mounted to, but electrically isolated from, the annular grounding bracket.
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公开(公告)号：USD908645S1
公开(公告)日：2021-01-26
申请号：US29703194
申请日：2019-08-26
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公开(公告)号：USD1040304S1
公开(公告)日：2024-08-27
申请号：US29796739
申请日：2021-06-25
摘要： FIG. 1 is a perspective view of a deposition ring for a physical vapor deposition chamber, according to the novel design.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a front elevation view thereof.
FIG. 5 is a back elevation view thereof.
FIG. 6 is a left side elevation view thereof.
FIG. 7 is a right side elevation view thereof; and,
FIG. 8 is a cross-sectional view taken along line 8-8 in FIG. 2.
The dashed lines in FIGS. 1-8 represent unclaimed environment forming no part of the claimed design.
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