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1.发明授权公开(公告)号：US12014906B2
公开(公告)日：2024-06-18
申请号：US17530809
申请日：2021-11-19
发明人： William R. Johanson , Keith A. Miller , Cheng-Hsiung Matthew Tsai , John C. Forster , Mukund Sundararajan
CPC分类号： H01J37/32724 , H01J37/32082 , H01J37/34 , H01J2237/002 , H01J2237/2007 , H01J2237/332
摘要： Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support includes: an upper assembly having a base plate assembly coupled to a lower surface of a cooling plate, wherein the base plate assembly includes a plurality of electrical feedthroughs, and wherein the cooling plate includes a plurality of openings aligned with the plurality of electrical feedthroughs; an electrostatic chuck disposed on the upper assembly and removably coupled to the cooling plate, wherein the electrostatic chuck has a chucking electrode disposed therein that is electrically coupled to a first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and an inner tube coupled to the cooling plate and configured to provide an RF delivery path to the electrostatic chuck.
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公开(公告)号：US11361982B2
公开(公告)日：2022-06-14
申请号：US16708908
申请日：2019-12-10
发明人： Kirankumar Neelasandra Savandaiah , William R. Johanson , David Gunther , Prashant Prabhakar Prabhu
IPC分类号： H01L21/68 , H01L21/683 , B08B3/12 , H01L21/67
摘要： Methods and apparatus for cleaning an electrostatic chuck (ESC) in a semiconductor chamber allow in-situ cleaning of the ESC. An apparatus may include an adapter or cover ring that is electrically isolated from a deposition ring; an annular grounding bracket mounted to and surrounding a pedestal, the annular grounding bracket has at least one horizontal grounding loop on an upper perimeter surface configured to provide electrical contact with the adapter or cover ring and to provide an RF return path to the ESC during plasma generation; and a bracket with a horizontal grounding loop on a first end to make electrical contact with the deposition ring and a vertical grounding loop on a second end to make electrical contact with a lift hoop which is electrically grounded, the bracket is mounted to, but electrically isolated from, the annular grounding bracket.
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公开(公告)号：US11024490B2
公开(公告)日：2021-06-01
申请号：US16213805
申请日：2018-12-07
摘要： Embodiments of magnetron assemblies and processing systems incorporating same are provided herein. In some embodiments, a magnetron assembly includes a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets spaced apart from each other; and an encapsulating body disposed in a space between the plurality of magnets. In some embodiments, the magnetron assembly further includes a body extending along a central axis of the magnetron assembly and having a coolant feedthrough channel to provide a coolant to an area beneath the body.
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公开(公告)号：US11655534B2
公开(公告)日：2023-05-23
申请号：US17857370
申请日：2022-07-05
CPC分类号： C23C14/18 , C23C14/14 , C23C14/16 , C23C14/3414 , C23C14/354 , H01J37/32027 , H01J37/32082
摘要： Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.
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公开(公告)号：US11447857B2
公开(公告)日：2022-09-20
申请号：US17021661
申请日：2020-09-15
摘要： Method and apparatus that forms low resistivity tungsten film on substrates. In some embodiments, a method of reducing resistivity of tungsten includes generating a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz and a magnetron, applying bias power at frequency of approximately 13.56 MHz to a substrate, and sputtering a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.
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公开(公告)号：USD877101S1
公开(公告)日：2020-03-03
申请号：US29639953
申请日：2018-03-09
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