- 专利标题： Target profile for a physical vapor deposition chamber target
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申请号： US29782632申请日： 2021-05-07
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公开(公告)号： USD1007449S1公开(公告)日： 2023-12-12
- 设计人: David Gunther , Kirankumar Neelasandra Savandaiah , Jiao Song , Madan Kumar Shimoga Mylarappa , Yue Cui , Nuno Yen-Chu Chen , Mengxue Wu
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： MOSER TABOADA
- LOC分类号： 13-03
摘要：
FIG. 1 is a top perspective view of a sputtering target for a physical vapor deposition chamber, according to one embodiment of the novel design.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a right side elevation view thereof.
FIG. 5 is a left side elevation view thereof.
FIG. 6 is a front elevation thereof.
FIG. 7 is a back elevation view thereof; and,
FIG. 8 is an enlarged partial right side elevation view showing portions of the design in greater detail.
The dash-dash broken lines in FIGS. 1-8 represent unclaimed environment and form no part of the claimed design.
The short dash-dot lines on FIG. 4 and FIG. 8 depict the bounds of the region taken from FIG. 4 to be enlarged on FIG. 8 and form no part of the claimed design.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a right side elevation view thereof.
FIG. 5 is a left side elevation view thereof.
FIG. 6 is a front elevation thereof.
FIG. 7 is a back elevation view thereof; and,
FIG. 8 is an enlarged partial right side elevation view showing portions of the design in greater detail.
The dash-dash broken lines in FIGS. 1-8 represent unclaimed environment and form no part of the claimed design.
The short dash-dot lines on FIG. 4 and FIG. 8 depict the bounds of the region taken from FIG. 4 to be enlarged on FIG. 8 and form no part of the claimed design.
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