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    Sensor mounted wafer
    1.
    发明授权
    Sensor mounted wafer 有权

    公开(公告)号：US12131958B2

    公开(公告)日：2024-10-29

    申请号：US17255441

    申请日：2020-11-05

    Applicant: E-TRON CO., LTD.

    Inventor： Jeong Woon Bae ,  Ho Seung Jeon ,  Jung Sub Song

    IPC: H01L21/66 ,  H01J37/32

    CPC classification number: H01L22/12 ,  H01J37/32935 ,  H01L22/14 ,  H01L22/34

    Abstract: A sensor mounted wafer includes a lower case, a circuit board, a metal layer, an upper case and lower case. A mounting groove is formed on a surface of the lower case. An electronic component is mounted on the circuit board, and placed in the mounting groove. The upper case having an insertion groove on a surface of the upper case, wherein the electronic component is inserted into the insertion groove, and the upper case is bonded together to the lower case. The metal layer placed on at least one surface of the lower case and the upper case.

    RF reference measuring circuit for a direct drive system supplying power to generate plasma in a substrate processing system
    2.
    发明授权
    RF reference measuring circuit for a direct drive system supplying power to generate plasma in a substrate processing system 有权

    公开(公告)号：US12106947B2

    公开(公告)日：2024-10-01

    申请号：US17910785

    申请日：2021-03-19

    Applicant: Lam Research Corporation

    Inventor： Maolin Long

    IPC: H01J37/32 ,  H01L21/67 ,  H03H7/38

    CPC classification number: H01J37/32935 ,  H01J37/32183 ,  H01L21/67017 ,  H03H7/38

    Abstract: A substrate processing system includes a drive circuit, an RF reference measuring circuit, and a make-break connector. The drive circuit generates an RF drive signal at a first RF frequency. The RF reference measuring circuit includes an LC circuit having an input impedance and an output impedance. An output of the LC circuit connects to an RF power meter and a dummy load. The make-break connector connects the drive circuit to one of the RF reference measuring circuit and a processing chamber load including a component of the substrate processing system. An output impedance of the drive circuit matches an impedance of an input impedance of the LC circuit. The output impedance of the drive circuit does not match impedances of the RF power meter and the dummy load. The LC circuit matches the impedance of the drive circuit to the RF power meter and the dummy load.

    APPARATUS AND METHOD FOR CONTROLLING TEMPERATURE OF CHAMBER
    5.
    发明公开
    APPARATUS AND METHOD FOR CONTROLLING TEMPERATURE OF CHAMBER 审中-公开

    公开(公告)号：US20240222098A1

    公开(公告)日：2024-07-04

    申请号：US18396470

    申请日：2023-12-26

    Applicant: SEMES CO. LTD.

    Inventor： Hakgyun Hong

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32935 ,  H01J37/32522 ,  H01L21/67248 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/24585

    Abstract: Provided is a chamber temperature control method for controlling a temperature of a chamber that performs processing on a wafer mounted on a support unit by using plasma, the method including: initiating processing on the wafer by using plasma within the chamber, measuring a first fluid temperature when fluid is supplied to the support unit and a second fluid temperature when the fluid is retrieved from the support unit by using a chiller temperature sensor attached to a chiller configured to supply the fluid to the support unit or retrieve the fluid from the support unit through a chiller pipe, determining set temperatures to be compared with reference temperatures of the chamber by determining whether an RF power source for generating the plasma is operating, calculating an error by comparing the set temperatures to the reference temperatures, and adjusting temperatures of heaters.

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