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公开(公告)号：US12288674B2
公开(公告)日：2025-04-29
申请号：US17859316
申请日：2022-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyosin Kim , Sungyong Lim , Minsung Kim , Dongyub Kim , Sungyeol Kim , Jongbeom Moon , Seungbo Shim
Abstract: Provided are a hybrid matcher capable of precisely performing impedance matching at a high speed when RF power is applied with a multi-level pulse in a facility using RF plasma, and an RF matching system including the hybrid matcher. The hybrid matcher includes a matching circuit in which a plurality of variable element-switch sets are connected to each other in parallel, the variable element-switch sets each including a variable impedance element and a switch connected to the variable impedance element in series and electrically operating therewith, a sensor disposed at a front stage of the matching circuit and configured to measure a current and a voltage of radio frequency (RF) power applied from an RF generator, a variable element driver configured to drive the variable impedance element, a switch driver configured to drive the switch, and a controller configured to control the variable element driver and the switch driver.
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公开(公告)号：US20240420930A1
公开(公告)日：2024-12-19
申请号：US18414681
申请日：2024-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changho Kim , Ho-Jun Lee , Kyung-Sun Kim , Sang-Woo Kim , Donghyeon Na , Seungbo Shim , Sung-Hyeon Jung
IPC: H01J37/32
Abstract: A substrate processing apparatus according to an embodiment includes: a chamber providing a processing space; a support member disposed in the processing space and configured to support a substrate during a process treatment; an antenna providing energy for plasma excitation into the processing space; and an inner electromagnet disposed outside the processing space.
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公开(公告)号：US20240128056A1
公开(公告)日：2024-04-18
申请号：US18133277
申请日：2023-04-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeontae Kim , Changho Kim , Yoonbum Nam , Seungbo Shim , Minyoung Hur , Kyungsun Kim , Juneeok Leem
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/32568 , H01J37/32816 , H01J2237/334
Abstract: The present disclosure provides plasma etching apparatuses and operating methods of the plasma etching apparatuses. In some embodiments, a plasma etching apparatus includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The processing chamber is configured to receive etching gas, and to etch a wafer using plasma that has been formed according to a plasma source pulse and a bias pulse. The a plasma source generator is configured to generate the plasma source pulse. The bias generator is configured to generate the bias pulse. The acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma.
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公开(公告)号：US20230060400A1
公开(公告)日：2023-03-02
申请号：US17747303
申请日：2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yoonbum Nam , Namkyun Kim , Seungbo Shim , Donghyeon Na , Naohiko Okunishi , Dongseok Han , Minyoung Hur , Byeongsang Kim , Kuihyun Yoon
Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.
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公开(公告)号：US11282679B2
公开(公告)日：2022-03-22
申请号：US16870186
申请日：2020-05-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghyeon Na , Hyosin Kim , Seungbo Shim , Hadong Jin , Dougyong Sung , Minyoung Hur
Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.
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Patent Agency Ranking
公开(公告)号：US20250069861A1
公开(公告)日：2025-02-27
申请号：US18440554
申请日：2024-02-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Myeongsoo Shin , Donghyeon Na , Kyung-Sun Kim , Jaebin Kim , Myoung Soo Park , Jong In Park , Seungbo Shim , Jimo Lee , Woongjin Cheon
IPC: H01J37/32
Abstract: A magnetic element assembly includes a magnetic member having a circular ring shape or an arc shape, and at least one focusing member made of a ferromagnetic material, connected to the magnetic member, and configured to adjust distribution of a magnetic force in a peripheral space, where the at least one focusing member includes a connection portion connected to the magnetic member and at least one focusing portion extending downward from the connection portion.
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公开(公告)号：US20240038505A1
公开(公告)日：2024-02-01
申请号：US18295466
申请日：2023-04-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghyeon Na , Jaebin Kim , Myeongsoo Shin , Dongseok Han , Kyungsun Kim , Namkyun Kim , Jaesung Kim , Seungbo Shim
CPC classification number: H01J37/3266 , H01J37/20 , H01J37/32532
Abstract: A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.
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公开(公告)号：US11869751B2
公开(公告)日：2024-01-09
申请号：US18085949
申请日：2022-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byungjo Kim , Sangki Nam , Jungmin Ko , Kwonsang Seo , Seungbo Shim , Younghyun Jo
IPC: H01J37/32
CPC classification number: H01J37/32541 , H01J37/32642 , H01J37/32715
Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.
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公开(公告)号：US11700324B2
公开(公告)日：2023-07-11
申请号：US17074760
申请日：2020-10-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junghoon Park , Hyunseok Kim , Hoyeong Lim , Seunggoo Kang , Moonki Yeo , Seungbo Shim , Yongseung Yi , Dongil Son
CPC classification number: H04M1/0277 , G06F1/3203 , H01M10/425 , H02M3/158 , H04M1/0262 , H04M1/0274 , H05K3/303 , H02M1/007
Abstract: According to an embodiment disclosed in the specification, an electronic device comprises a battery disposed inside the electronic device; a printed circuit board (PCB) disposed inside the electronic device; at least one electronic component disposed on the PCB; and a first buck converter having a first end and a second end, wherein the first end is routed to the battery; and a second buck converter having a first end and a second end, wherein the first end is selectively electrically connected to the second end of the first buck converter, and the second end is routed to the at least one electronic component, and wherein the first buck converter and the second buck converter are configured to boost a voltage provided from the battery through an electrical path formed from the battery by the first end of the first buck converter, and the second end of the first buck converter, the first end of the second buck converter and the second end of the second buck converter to the at least one electronic component.
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公开(公告)号：US11545344B2
公开(公告)日：2023-01-03
申请号：US17188064
申请日：2021-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byungjo Kim , Sangki Nam , Jungmin Ko , Kwonsang Seo , Seungbo Shim , Younghyun Jo
IPC: H01J37/32
Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.
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