公开(公告)号：US20250085445A1

公开(公告)日：2025-03-13

申请号：US18633031

申请日：2024-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chansoo Kang ,  Daewon Kang ,  Minju Kim ,  Tae-Hyun Kim ,  Sang Ki Nam ,  Dougyong Sung ,  Jungmo Yang ,  Sejin Oh ,  Keonhee Lim ,  Junho Im

IPC: G01T1/36 ,  G01T1/20 ,  H01L21/67

Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

公开(公告)号：US11075088B2

公开(公告)日：2021-07-27

申请号：US16812925

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11582 ,  H01L49/02 ,  H01J37/32

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US10896838B2

公开(公告)日：2021-01-19

申请号：US16248328

申请日：2019-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsung Kim ,  Myoung Soo Park ,  Dougyong Sung ,  Yun-Kwang Jeon

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: An electrostatic chuck includes a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a lower heater section including lower heaters in the dielectric plate between the chuck electrode and the base, and a lower ground electrode between the lower heaters and the base. The chuck further includes an upper heater section including upper heaters between the lower heaters and the chuck electrode, and a upper ground electrode between the upper heaters and the lower heaters, and a plurality of via contact electrodes connecting the upper ground electrode into the lower ground electrode.

公开(公告)号：US11948777B2

公开(公告)日：2024-04-02

申请号：US17552698

申请日：2021-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Dougyong Sung ,  Taekjoon Rhee ,  Sungwook Hong ,  Hakyoung Kim ,  Sangmin Jeong

IPC: C23C16/02 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/0245

Abstract: A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.

公开(公告)号：US11384433B2

公开(公告)日：2022-07-12

申请号：US17159244

申请日：2021-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkyu Sung ,  Sung-Ki Lee ,  Dougyong Sung ,  Sang-Ho Lee ,  Kangmin Jeon

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/683 ,  H01J37/32 ,  C23C16/509

Abstract: A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

公开(公告)号：US11282679B2

公开(公告)日：2022-03-22

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon Na ,  Hyosin Kim ,  Seungbo Shim ,  Hadong Jin ,  Dougyong Sung ,  Minyoung Hur

IPC: H01J37/32 ,  H03H7/40 ,  H03H7/01

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.

公开(公告)号：US10934621B2

公开(公告)日：2021-03-02

申请号：US16509946

申请日：2019-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkyu Sung ,  Sung-Ki Lee ,  Dougyong Sung ,  Sang-Ho Lee ,  Kangmin Jeon

IPC: C23C16/455 ,  H01L21/683 ,  H01J37/32 ,  C23C16/509

Abstract: A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

公开(公告)号：US09691618B2

公开(公告)日：2017-06-27

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong Sung ,  Sejin Oh ,  Je-Hun Woo ,  Hyunju Lee ,  Seungkyu Lim ,  Kiho Hwang

IPC: H01L21/26 ,  H01L21/263 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US20240274418A1

公开(公告)日：2024-08-15

申请号：US18455949

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungho Jang ,  Protopopov Vladimir ,  Dohoon Kwon ,  Sangki Nam ,  Dougyong Sung ,  Sungwon Cho

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J2237/24564

Abstract: An apparatus for measuring real-time plasma density includes, at least one plasma density measurement sensor in a process chamber, the at least one plasma density measurement sensor being configured to sense a plasma current between a first electrode and a second electrode when plasma is generated, and to generate an optical signal in response to the plasma current, and an optical signal detector on a side surface of the process chamber, the optical signal detector being configured to detect the optical signal from the at least one plasma density measurement sensor.

公开(公告)号：US20240234093A1

公开(公告)日：2024-07-11

申请号：US18235653

申请日：2023-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Dougyong Sung

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/334

Abstract: A substrate processing apparatus includes a chamber including an upper chamber defining a first plasma region for generating first plasma and a lower chamber defining a second plasma region for generating second plasma; a substrate support below the first and second plasma regions in the lower chamber, and configured to support a substrate; distribution plates between the first and second plasma regions in the upper chamber, and configured to inject ions included in the first plasma onto the substrate; a first plasma generating device on a side of the upper chamber and configured to generate the first plasma from a first process gas; a second plasma generating device on a side of the lower chamber and configured to generate the second plasma from a second process gas; and a controller that alternately operates the first plasma generating device and the second plasma generating device.