GRID FOR SEMICONDUCTOR PROCESS
    1.
    发明申请

    公开(公告)号:US20250132133A1

    公开(公告)日:2025-04-24

    申请号:US18640999

    申请日:2024-04-19

    Abstract: A substrate processing apparatus comprises a process chamber, a stage in the process chamber, the stage supporting a substrate, and a grid in the process chamber and upwardly spaced apart from the stage. The grid includes a dielectric plate having a central axis that extends in a first direction, a first electrode plate embedded in the dielectric plate, a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate, and a third electrode plate downwardly spaced apart from the second electrode plate and embedded in the dielectric plate.

    PLASMA LIGHT DETECTION SYSTEM INCLUDING A SCINTILLATING WINDOW

    公开(公告)号:US20250085445A1

    公开(公告)日:2025-03-13

    申请号:US18633031

    申请日:2024-04-11

    Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

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