公开(公告)号：US11948777B2

公开(公告)日：2024-04-02

申请号：US17552698

申请日：2021-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Dougyong Sung ,  Taekjoon Rhee ,  Sungwook Hong ,  Hakyoung Kim ,  Sangmin Jeong

IPC: C23C16/02 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/0245

Abstract: A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.