公开(公告)号：US12020903B2

公开(公告)日：2024-06-25

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01L21/3065 ,  H01L21/6833 ,  H03H7/38 ,  H01J2237/334

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US11545341B2

公开(公告)日：2023-01-03

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US11948777B2

公开(公告)日：2024-04-02

申请号：US17552698

申请日：2021-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Dougyong Sung ,  Taekjoon Rhee ,  Sungwook Hong ,  Hakyoung Kim ,  Sangmin Jeong

IPC: C23C16/02 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/0245

Abstract: A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.