公开(公告)号：US12020903B2

公开(公告)日：2024-06-25

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01L21/3065 ,  H01L21/6833 ,  H03H7/38 ,  H01J2237/334

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US11545341B2

公开(公告)日：2023-01-03

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.