公开(公告)号：US09691618B2

公开(公告)日：2017-06-27

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong Sung ,  Sejin Oh ,  Je-Hun Woo ,  Hyunju Lee ,  Seungkyu Lim ,  Kiho Hwang

IPC: H01L21/26 ,  H01L21/263 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.