公开(公告)号：US20250087509A1

公开(公告)日：2025-03-13

申请号：US18647044

申请日：2024-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jitae Park ,  Kwangho Lee ,  Seongjin In ,  Keonhee Lim ,  Yoonjae Kim ,  Ilwoo Kim ,  Sangki Nam ,  Sejin Oh

IPC: H01L21/67 ,  G01J3/443 ,  G05B19/4099 ,  H01J37/32

Abstract: A semiconductor process device includes a housing including a chamber where a substrate is processed, a viewport in a side wall of the housing, an adapter configured to receive reflected light in which light generated from plasma generated inside the chamber is reflected at a target position on a surface of a structure provided on an upper surface of the substrate, a polarization beam splitter configured to separate the reflected light received from the adapter into P-polarized light and S-polarized light, a spectroscope configured to analyze spectra of the P-polarized light and the S-polarized light, and a control unit configured to monitor a thickness of the structure based on luminous intensity over time at one or more wavelengths of each of the P-polarized light and the S-polarized light, based on results of analyzing the spectra.

公开(公告)号：US20240212992A1

公开(公告)日：2024-06-27

申请号：US18453378

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changheon Lee ,  Sangki Nam ,  Kuihyun Yoon ,  Kiho Lee ,  Sangho Lee ,  Sangheun Lee ,  Jaemin Rhee ,  Junghyun Cho ,  Seoyeon Choi

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J37/3299 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Provided is a plasma processing apparatus including a substrate chuck in a chamber, a restriction ring surrounding an outer perimeter of the substrate chuck, a movable ring on the restriction ring, and an actuator configured to move the movable ring, wherein grooves formed in the restriction ring are opened or closed by movement of the movable ring. In addition, provided is a plasma processing method using the plasma processing apparatus.

公开(公告)号：US12087550B2

公开(公告)日：2024-09-10

申请号：US17874475

申请日：2022-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Vladimir Vsevolodovich Protopopov ,  Vasily Grigorievich Pashkovskiy ,  Chansoo Kang ,  Youngdo Kim ,  Hoonseop Kim ,  Sangki Nam ,  Sejin Oh ,  Changsoon Lim

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32935

Abstract: A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.

公开(公告)号：US11996275B2

公开(公告)日：2024-05-28

申请号：US17942368

申请日：2022-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong Lim ,  Chansoo Kang ,  Youngdo Kim ,  Namkyun Kim ,  Sungyeol Kim ,  Sangki Nam ,  Seungbo Shim ,  Kyungmin Lee

IPC: H01J37/32 ,  G01J1/44

CPC classification number: H01J37/32935 ,  G01J1/44 ,  H01J37/32174 ,  G01J2001/446

Abstract: A diagnostic device for diagnosing distribution of a radical in a plasma processing chamber, the diagnostic device, may include a spectrometer receiving an optical signal through at least one optical channel connected to the plasma processing chamber, and performing spectral analysis on the optical signal in response to a synchronization signal corresponding to each of states of a multi-level pulse applied to the plasma processing chamber and a synchronizer generating the synchronization signal corresponding to each of the states of the multi-level pulse.

公开(公告)号：US20230117953A1

公开(公告)日：2023-04-20

申请号：US17877439

申请日：2022-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Youngdo Kim ,  Sanghun Kim ,  Sungyeol Kim ,  Sangki Nam ,  Taemin Earmme ,  Changyun Lee ,  Seongmoon Ha

IPC: H01J37/32

Abstract: A plasma generator may include a dielectric tube, an inner helical coil surrounding the dielectric tube and configured to generate plasma by forming a stationary wave of at least one of a magnetic field and an electromagnetic wave in the dielectric tube, a variable capacitor configuring a closed loop with the inner helical coil, an outer helical coil surrounding the inner helical coil and magnetically coupled to the inner helical coil, and a radio frequency (RF) power supply configured to provide RF power at a variable frequency to the inner helical coil.

公开(公告)号：US12125687B2

公开(公告)日：2024-10-22

申请号：US17709613

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdo Kim ,  Sungyong Lim ,  Daewon Kang ,  Sungyeol Kim ,  Sangki Nam ,  Myunggeun Song ,  Byungkook Cho ,  Hyeoncheol Jin ,  Jonghun Pi

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32183 ,  H01J37/32935 ,  H01J2237/24564 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

公开(公告)号：US20240274418A1

公开(公告)日：2024-08-15

申请号：US18455949

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungho Jang ,  Protopopov Vladimir ,  Dohoon Kwon ,  Sangki Nam ,  Dougyong Sung ,  Sungwon Cho

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J2237/24564

Abstract: An apparatus for measuring real-time plasma density includes, at least one plasma density measurement sensor in a process chamber, the at least one plasma density measurement sensor being configured to sense a plasma current between a first electrode and a second electrode when plasma is generated, and to generate an optical signal in response to the plasma current, and an optical signal detector on a side surface of the process chamber, the optical signal detector being configured to detect the optical signal from the at least one plasma density measurement sensor.

公开(公告)号：US20240147698A1

公开(公告)日：2024-05-02

申请号：US18368635

申请日：2023-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geonyeop Lee ,  Dongwook Kim ,  Yangdoo Kim ,  Sangki Nam ,  Sangwuk Park ,  Minkyu Suh ,  Dokeun Lee ,  Sungho Jang ,  Jungpyo Hong

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0335

Abstract: A semiconductor device includes; a lower structure, lower electrodes on the lower structure, wherein each lower electrode includes a first lower electrode and a second lower electrode on the first lower electrode and electrically connected to the first lower electrode, an upper electrode covering the lower electrodes, and a dielectric film between the lower electrodes and the upper electrode, wherein the first lower electrode includes a pillar portion and a protruding portion on the pillar portion, wherein protruding portion has a complex shape that contacts the second lower electrode.

公开(公告)号：US20240128055A1

公开(公告)日：2024-04-18

申请号：US18232992

申请日：2023-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunbae Kim ,  Jihwan Kim ,  Sangki Nam ,  Daeun Son ,  Seungbo Shim ,  Juho Lee ,  Hyunjae Lee ,  Hyunhak Jeong

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J2237/0473

Abstract: A method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (RF) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (DC) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. The RF signal and the DC bias signal are offset from each other. The method further includes performing a plasma process on a layer on the wafer, using the RF signal and DC bias signal.

公开(公告)号：US11195696B2

公开(公告)日：2021-12-07

申请号：US16850252

申请日：2020-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyu Shin ,  Sangki Nam ,  Soonam Park ,  Akira Koshiishi ,  Kyuhee Han

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01J37/063

Abstract: An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.