公开(公告)号：US12002651B2

公开(公告)日：2024-06-04

申请号：US17158231

申请日：2021-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunbae Kim ,  Hyejin Kim ,  Chanhee Park

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32091 ,  H01J37/32577

Abstract: A wafer processing apparatus includes a chamber, and a voltage waveform generator configured to accelerate plasma ions of the chamber, the voltage waveform generator includes: a pulse circuit configured to apply a chamber voltage, which is a pulse voltage, to the chamber by adjusting a chamber current applied to the chamber; and a slope circuit configured to generate a slope in an on-duty of the chamber voltage, which is the pulse voltage, and the pulse circuit includes a first inductive element configured to store a first internal current.

公开(公告)号：US20240128055A1

公开(公告)日：2024-04-18

申请号：US18232992

申请日：2023-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunbae Kim ,  Jihwan Kim ,  Sangki Nam ,  Daeun Son ,  Seungbo Shim ,  Juho Lee ,  Hyunjae Lee ,  Hyunhak Jeong

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J2237/0473

Abstract: A method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (RF) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (DC) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. The RF signal and the DC bias signal are offset from each other. The method further includes performing a plasma process on a layer on the wafer, using the RF signal and DC bias signal.

公开(公告)号：US11705306B2

公开(公告)日：2023-07-18

申请号：US17470337

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunbae Kim ,  Hyunjae Lee ,  Youngdo Kim ,  Hyejin Kim ,  Sangki Nam ,  Chanhee Park ,  Minho Jung

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32146 ,  H01J2237/002

Abstract: A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.

公开(公告)号：US20210407769A1

公开(公告)日：2021-12-30

申请号：US17158231

申请日：2021-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunbae Kim ,  Hyejin Kim ,  Chanhee Park

IPC: H01J37/32

Abstract: A wafer processing apparatus includes a chamber, and a voltage waveform generator configured to accelerate plasma ions of the chamber, the voltage waveform generator includes: a pulse circuit configured to apply a chamber voltage, which is a pulse voltage, to the chamber by adjusting a chamber current applied to the chamber; and a slope circuit configured to generate a slope in an on-duty of the chamber voltage, which is the pulse voltage, and the pulse circuit includes a first inductive element configured to store a first internal current.