-
1.发明公开公开(公告)号：US20240128055A1
公开(公告)日：2024-04-18
申请号：US18232992
申请日：2023-08-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunbae Kim , Jihwan Kim , Sangki Nam , Daeun Son , Seungbo Shim , Juho Lee , Hyunjae Lee , Hyunhak Jeong
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32128 , H01J2237/0473
Abstract: A method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (RF) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (DC) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. The RF signal and the DC bias signal are offset from each other. The method further includes performing a plasma process on a layer on the wafer, using the RF signal and DC bias signal.
-
公开(公告)号：US11675658B2
公开(公告)日：2023-06-13
申请号：US17407028
申请日：2021-08-19
Inventor： Kwonjong Lee , Sanghyo Kim , Hyojin Lee , Minyoung Chung , Yongsung Kil , Seungil Park , Seunghyun Lee , Hyunjae Lee
CPC classification number: G06F11/1008 , G06N3/02 , H04L1/0047 , H04L1/0057
Abstract: Provided is a 5th generation (5G) or 6th generation (6G) communication system for supporting higher data rates after 4G communication systems such as long term evolution (LTE). A communication method of a user equipment (UE) includes receiving, from a base station (BS), information about a decoding mode including bit information corresponding to the number of times of perturbation, receiving data from the BS on a Physical Downlink Shared Channel (PDSCH), and decoding the received data based on the information about the decoding mode, wherein the information about the decoding mode may be generated based on service information including at least one of Quality of Service (QoS), a service priority, packet delay performance, packet error probability performance, a requirement, or a data transmission scheme.
-
3.发明公开公开(公告)号：US20230267995A1
公开(公告)日：2023-08-24
申请号：US18161303
申请日：2023-01-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehwan MOON , Dukhyun Choe , Jinseong Heo , Hyunjae Lee
CPC classification number: G11C11/54 , H01L29/78391 , H01L29/516 , H10B53/30 , H01L29/6684 , H01L27/105 , H01L21/02175 , G11C11/2255 , G11C11/2257
Abstract: Provided are a ferroelectric field effect transistor, a neural network apparatus, and an electronic apparatus. The ferroelectric field effect transistor includes: a substrate; a source protruding from an upper surface of the substrate in a first direction; a drain protruding from the upper surface of the substrate in the first direction; a channel spaced apart from the upper surface of the substrate and extending between the source and the drain in a second direction different from the first direction; a ferroelectric film surrounding an outer circumferential surface of the channel; and a gate electrode surrounding the ferroelectric film, wherein the channel has curved cross-sections having a plurality of different radii of curvature.
-
4.发明公开公开(公告)号：US20230267320A1
公开(公告)日：2023-08-24
申请号：US18168681
申请日：2023-02-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehwan MOON , Jinseong Heo , Seunggeol Nam , Hagyoul Bae , Hyunjae Lee
IPC: G06N3/063 , H10B51/30 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/775 , G11C11/22 , G11C11/54
CPC classification number: G06N3/063 , H10B51/30 , H01L29/0673 , H01L29/42392 , H01L29/4966 , H01L29/516 , H01L29/78391 , H01L29/7851 , H01L29/775 , G11C11/223 , G11C11/2255 , G11C11/2257 , G11C11/54
Abstract: A ferroelectric field effect transistor includes: a source; a drain; a first channel connected to and between the source and the drain; a second channel connected to and between the source and the drain and spaced apart from the first channel; a ferroelectric layer covering the first channel and the second channel; a first gate layer disposed on the ferroelectric layer in correspondence with the first channel; a second gate layer disposed on the ferroelectric layer in correspondence with the second channel; and a gate wiring electrically connecting the first gate layer to the second gate layer, wherein the first gate layer includes a first metallic material having a first work function, and the second gate layer includes a second metallic material having a second work function, wherein the second work function is different from the first work function.
-
5.发明授权公开(公告)号：US11451244B2
公开(公告)日：2022-09-20
申请号：US17277041
申请日：2019-07-23
Inventor： Min Jang , Sanghyo Kim , Hyunjae Lee , Hyosang Ju , Jonghwan Kim , Hongsil Jeong
Abstract: The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transfer rate beyond a 4th generation (4G) communication system such as long term evolution (LTE). The present disclosure relates to encoding and decoding using a polar code in a wireless communication system. A method for operation of a first device in a wireless communication system may comprise the steps of: among sub-blocks including at least one node, identifying at least one inactive sub-block to deactivate the node operation in the sub-blocks; encoding data by using a construction matrix determined on the basis of the at least one inactive sub-block; and transmitting the encoded data to a second device.
-
Patent Agency Ranking
6.发明授权公开(公告)号：US12068852B2
公开(公告)日：2024-08-20
申请号：US17433152
申请日：2020-02-21
Inventor： Min Jang , Sanghyo Kim , Hyunjae Lee , Hyosang Ju , Jonghwan Kim , Hyuntack Lim , Hongsil Jeong
CPC classification number: H04L1/0061 , H04L1/0026 , H04L1/0046 , H04L1/203
Abstract: The present disclosure relates to a 5th (5G) generation) or pre-5G communication system for supporting a higher data transmission rate beyond a 4th (4G) generation communication system such as long term evolution (LTE). The present disclosure relates to false alarm detection of detecting in a wireless communication system, and an operating method of a receiving node may include receiving a signal from a transmitting node, obtaining a plurality of decoding paths by decoding bits contained in the received signal, and determining whether the decoding is successful based on a detection metric determined based on values representing path metrics of the plurality of the decoding paths.
-
公开(公告)号：US11959170B2
公开(公告)日：2024-04-16
申请号：US17333820
申请日：2021-05-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soyoung Lee , Hyunjae Lee , Ik Soo Kim , Jang-Hee Lee
IPC: C23C16/448 , C23C16/44 , C23C16/455 , H01L21/02 , B01B1/00 , C23C14/24
CPC classification number: C23C16/45544 , C23C16/4412 , C23C16/4483 , H01L21/02175 , H01L21/0228 , B01B1/005 , C23C14/243 , C23C16/4485 , C23C16/45561
Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.
-
公开(公告)号：US11705306B2
公开(公告)日：2023-07-18
申请号：US17470337
申请日：2021-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunbae Kim , Hyunjae Lee , Youngdo Kim , Hyejin Kim , Sangki Nam , Chanhee Park , Minho Jung
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32146 , H01J2237/002
Abstract: A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.
-
公开(公告)号：US12119060B2
公开(公告)日：2024-10-15
申请号：US17953491
申请日：2022-09-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinseong Heo , Hagyoul Bae , Seunggeol Nam , Hyunjae Lee , Dukhyun Choe
IPC: G11C15/04
CPC classification number: G11C15/04
Abstract: Provided is a content-addressable memory. The content-addressable memory may include a memory cell connected to a match line, a word line, and a search line, and the memory cell includes a first channel layer and a second channel layer doped with different dopants.
-
公开(公告)号：US11047045B2
公开(公告)日：2021-06-29
申请号：US16030323
申请日：2018-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Soyoung Lee , Hyunjae Lee , Ik Soo Kim , Jang-Hee Lee
IPC: C23C16/455 , H01L21/02 , C23C16/44 , C23C16/448 , C23C14/24 , B01B1/00
Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.016 seconds)
