公开(公告)号：US10553582B2

公开(公告)日：2020-02-04

申请号：US15413466

申请日：2017-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonjae Kim ,  Cheol Kim ,  Yong-Hoon Son ,  Jin-Hyuk Yoo ,  Woojin Jung

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

公开(公告)号：US10103030B2

公开(公告)日：2018-10-16

申请号：US15377113

申请日：2016-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-sun Min ,  Yoonjae Kim ,  Sooho Shin ,  Sunghee Han

IPC: H01L21/3205 ,  H01L21/306 ,  H01L21/265 ,  H01L21/283 ,  H01L21/308 ,  H01L21/768 ,  H01L21/822 ,  H01L21/033 ,  H01L21/3213 ,  H01L27/108

Abstract: A method of fabricating a semiconductor device includes sequentially forming a first insulation pattern and an etch stop pattern on a peripheral circuit area of a substrate, forming a first mask pattern on a cell array area of the substrate, the first mask pattern including a pair of first portions extending in parallel and a second portion covering a portion of a sidewall of the etch stop pattern and a portion of a sidewall of the first insulation pattern, forming a second insulation layer covering the etch stop pattern and the first mask pattern, partially etching the etch stop pattern and the second insulation layer to expose the second portion of the first mask pattern, and removing the second portion of the first mask pattern to divide the pair of first portions of the first mask pattern.

公开(公告)号：US20250087509A1

公开(公告)日：2025-03-13

申请号：US18647044

申请日：2024-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jitae Park ,  Kwangho Lee ,  Seongjin In ,  Keonhee Lim ,  Yoonjae Kim ,  Ilwoo Kim ,  Sangki Nam ,  Sejin Oh

IPC: H01L21/67 ,  G01J3/443 ,  G05B19/4099 ,  H01J37/32

Abstract: A semiconductor process device includes a housing including a chamber where a substrate is processed, a viewport in a side wall of the housing, an adapter configured to receive reflected light in which light generated from plasma generated inside the chamber is reflected at a target position on a surface of a structure provided on an upper surface of the substrate, a polarization beam splitter configured to separate the reflected light received from the adapter into P-polarized light and S-polarized light, a spectroscope configured to analyze spectra of the P-polarized light and the S-polarized light, and a control unit configured to monitor a thickness of the structure based on luminous intensity over time at one or more wavelengths of each of the P-polarized light and the S-polarized light, based on results of analyzing the spectra.

公开(公告)号：US11490499B2

公开(公告)日：2022-11-01

申请号：US17242022

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungho Jang ,  Yoonjae Kim ,  Hyuck Shin ,  Donghyub Lee ,  Kul Inn

IPC: H05G2/00 ,  G03F7/20 ,  H01S3/223

Abstract: A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

公开(公告)号：US10797051B2

公开(公告)日：2020-10-06

申请号：US16716384

申请日：2019-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonjae Kim ,  Cheol Kim ,  Yong-Hoon Son ,  Jin-Hyuk Yoo ,  Woojin Jung

IPC: H01L29/16 ,  H01L21/02 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/165

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.