公开(公告)号：US09214409B2

公开(公告)日：2015-12-15

申请号：US13786853

申请日：2013-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Hyuk Yoo ,  Dae-Hyun Jang ,  Yoo-Chul Kong ,  Kyoung-Sub Shin

IPC: H01L29/76 ,  H01L23/48 ,  H01L27/115

CPC classification number: H01L27/1157 ,  H01L23/48 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.

Abstract translation: 提供一种半导体器件。 半导体器件包括设置在半导体衬底上的导电图案。 设置在导电图案上并且彼此位于相同水平面的第一和第二导电线。 隔离图案设置在第一和第二导线之间。 提供穿过第一导线和导电图案的第一垂直结构。 提供穿过第二导线和导电图案的第二垂直结构。 提供穿过导电图案并与隔离图案接触的辅助图案。

公开(公告)号：US10797051B2

公开(公告)日：2020-10-06

申请号：US16716384

申请日：2019-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonjae Kim ,  Cheol Kim ,  Yong-Hoon Son ,  Jin-Hyuk Yoo ,  Woojin Jung

IPC: H01L29/16 ,  H01L21/02 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/165

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

公开(公告)号：US10553582B2

公开(公告)日：2020-02-04

申请号：US15413466

申请日：2017-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonjae Kim ,  Cheol Kim ,  Yong-Hoon Son ,  Jin-Hyuk Yoo ,  Woojin Jung

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.