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1.发明申请公开(公告)号：US20180197719A1
公开(公告)日：2018-07-12
申请号：US15606025
申请日：2017-05-26
发明人： Yil-Hyung Lee , Yoo-Chul Kong , Jong-Kyu Kim , Seok-Woo Nam , Jong-Soon Park , Kyoung-Sub Shin
CPC分类号： H01J37/32412 , H01J37/32422 , H01J37/3435 , H01J37/3438 , H01J2237/083 , H01J2237/334
摘要： In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.
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公开(公告)号：US09214409B2
公开(公告)日：2015-12-15
申请号：US13786853
申请日：2013-03-06
发明人： Jin-Hyuk Yoo , Dae-Hyun Jang , Yoo-Chul Kong , Kyoung-Sub Shin
IPC分类号： H01L29/76 , H01L23/48 , H01L27/115
CPC分类号： H01L27/1157 , H01L23/48 , H01L23/528 , H01L27/11524 , H01L27/11556 , H01L27/11573 , H01L27/11582 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.
摘要翻译： 提供一种半导体器件。 半导体器件包括设置在半导体衬底上的导电图案。 设置在导电图案上并且彼此位于相同水平面的第一和第二导电线。 隔离图案设置在第一和第二导线之间。 提供穿过第一导线和导电图案的第一垂直结构。 提供穿过第二导线和导电图案的第二垂直结构。 提供穿过导电图案并与隔离图案接触的辅助图案。
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公开(公告)号：US10410839B2
公开(公告)日：2019-09-10
申请号：US15606025
申请日：2017-05-26
发明人： Yil-Hyung Lee , Yoo-Chul Kong , Jong-Kyu Kim , Seok-Woo Nam , Jong-Soon Park , Kyoung-Sub Shin
IPC分类号： H01L21/263 , H01J37/32 , H01J37/34
摘要： In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.
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4.发明申请公开(公告)号：US20190272979A1
公开(公告)日：2019-09-05
申请号：US16413854
申请日：2019-05-16
发明人： Yil-Hyung Lee , Yoo-Chul Kong , Jong-Kyu Kim , Seok-Woo Nam , Jong-Soon Park , Kyoung-Sub Shin
摘要： In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.
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5.发明授权公开(公告)号：US09905754B1
公开(公告)日：2018-02-27
申请号：US15630046
申请日：2017-06-22
发明人： Hye-Ji Yoon , Yoo-Chul Kong , Jong-Kyu Kim , Sang-Kuk Kim , Yil-Hyung Lee
CPC分类号： H01L43/12 , H01L27/222
摘要： In a method of forming a pattern of a semiconductor device, a first mask layer and an anti-reflective coating layer may be sequentially formed on a substrate. A photoresist layer may be formed on the anti-reflective coating layer. The photoresist layer may be exposed and developed to form a first preliminary photoresist pattern. A first ion beam etching process may be performed on the first preliminary photoresist pattern to form a second preliminary photoresist pattern. A second ion beam etching process may be performed on the second preliminary photoresist pattern to form a photoresist pattern. A second incident angle of an ion beam in the second ion beam etching process may be greater than a first incident angle of an ion beam in the first ion beam etching process. The anti-reflective coating layer and the first mask layer may be etched using the photoresist pattern as an etching mask to form a mask structure.
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