公开(公告)号：US20140231958A1

公开(公告)日：2014-08-21

申请号：US14070988

申请日：2013-11-04

申请人： Samsung Electronics Co., Ltd.

发明人： Han-Jin Lim ,  Seok-Woo Nam ,  Jung-Hwan Oh ,  Ki-Vin Im

IPC分类号： H01L49/02

CPC分类号： H01L28/40 ,  H01L27/1085

摘要： A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second dielectric layers may include the same dielectric material with different concentration of an impurity therein. A second electrode is disposed on the second dielectric layer.

摘要翻译： 存储器件的电容器包括具有不同能带隙的电介质层。 电容器可以包括例如第一电极和第一电极上的第一电介质层。 电容器还可以包括在第一电介质层上的第二电介质层。 第一和第二电介质层可以包括具有不同浓度的杂质的相同介电材料。 第二电极设置在第二电介质层上。

公开(公告)号：US09847422B2

公开(公告)日：2017-12-19

申请号：US15290269

申请日：2016-10-11

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L21/308

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

公开(公告)号：US08969939B2

公开(公告)日：2015-03-03

申请号：US13960434

申请日：2013-08-06

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC分类号： H01L29/792 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/115 ,  H01L21/28 ,  H01L21/762 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

摘要翻译： 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。

公开(公告)号：US10410839B2

公开(公告)日：2019-09-10

申请号：US15606025

申请日：2017-05-26

申请人： Samsung Electronics Co., Ltd.

发明人： Yil-Hyung Lee ,  Yoo-Chul Kong ,  Jong-Kyu Kim ,  Seok-Woo Nam ,  Jong-Soon Park ,  Kyoung-Sub Shin

IPC分类号： H01L21/263 ,  H01J37/32 ,  H01J37/34

摘要： In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

公开(公告)号：US09263588B2

公开(公告)日：2016-02-16

申请号：US14635034

申请日：2015-03-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

公开(公告)号：US09153590B2

公开(公告)日：2015-10-06

申请号：US14297220

申请日：2014-06-05

申请人： Samsung Electronics Co., Ltd.

发明人： Han-Jin Lim ,  Won-Seok Yoo ,  Seok-Woo Nam

IPC分类号： G11C11/00 ,  H01L27/108

CPC分类号： H01L27/10814 ,  H01L27/10823 ,  H01L27/10855

摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括由形成在单元区域中的器件隔离层限定的有源区，在有源区中包括掩埋栅的晶体管，形成在位于掩埋栅的一侧的有源区上的金属接触， 在金属接触件上，在着陆焊盘上形成电连接到有源区的电容器，以及在金属触点和有源区之间的金属氧化物层。

公开(公告)号：US20190272979A1

公开(公告)日：2019-09-05

申请号：US16413854

申请日：2019-05-16

申请人： Samsung Electronics Co., Ltd.

发明人： Yil-Hyung Lee ,  Yoo-Chul Kong ,  Jong-Kyu Kim ,  Seok-Woo Nam ,  Jong-Soon Park ,  Kyoung-Sub Shin

IPC分类号： H01J37/32 ,  H01J37/34

摘要： In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

公开(公告)号：US09455259B2

公开(公告)日：2016-09-27

申请号：US14716371

申请日：2015-05-19

申请人： Samsung Electronics Co., Ltd.

发明人： Han-Jin Lim ,  Youn-Soo Kim ,  Hyun Park ,  Soon-Gun Lee ,  Eun-Ae Cho ,  Chin-Moo Cho ,  Sung-Jin Kim ,  Seok-Woo Nam

IPC分类号： H01L27/108 ,  H01L49/02

CPC分类号： H01L27/10814 ,  H01L28/75 ,  H01L28/91

摘要： A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

摘要翻译： 半导体器件包括在电介质层和电容器的电极之间的界面处具有减少的氧缺陷的电容器。 半导体器件包括下金属层; 在下金属层上的介电层并含有第一金属; 在介电层上的牺牲层并含有第二金属; 和牺牲层上的上金属层。 牺牲层中的第二金属的电负性大于电介质层中第一金属的电负性。

公开(公告)号：US20160155838A1

公开(公告)日：2016-06-02

申请号：US15006522

申请日：2016-01-26

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

公开(公告)号：US20160079247A1

公开(公告)日：2016-03-17

申请号：US14716371

申请日：2015-05-19

申请人： Samsung Electronics Co., Ltd.

发明人： Han-Jin Lim ,  Youn-Soo Kim ,  Hyun Park ,  Soon-Gun Lee ,  Eun-Ae Cho ,  Chin-Moo Cho ,  Sung-Jin Kim ,  Seok-Woo Nam

IPC分类号： H01L27/108 ,  H01L49/02

CPC分类号： H01L27/10814 ,  H01L28/75 ,  H01L28/91

摘要： A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

摘要翻译： 半导体器件包括在电介质层和电容器的电极之间的界面处具有减少的氧缺陷的电容器。 半导体器件包括下金属层; 在下金属层上的介电层并含有第一金属; 在介电层上的牺牲层并含有第二金属; 和牺牲层上的上金属层。 牺牲层中的第二金属的电负性大于电介质层中第一金属的电负性。