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公开(公告)号：US09595612B2
公开(公告)日：2017-03-14
申请号：US15006522
申请日：2016-01-26
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/76 , H01L29/78 , H01L21/28 , H01L21/762 , H01L21/8234 , H01L27/115 , H01L29/423 , H01L29/66 , H01L29/06 , H01L29/10
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
摘要翻译： 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。
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公开(公告)号：US09184232B2
公开(公告)日：2015-11-10
申请号：US14538046
申请日：2014-11-11
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/06 , H01L21/28 , H01L21/762 , H01L21/8234 , H01L27/115 , H01L29/423 , H01L29/66 , H01L29/78
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
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公开(公告)号：US20130320461A1
公开(公告)日：2013-12-05
申请号：US13960434
申请日：2013-08-06
发明人： JUNG-HWAN KIM , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/78
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
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公开(公告)号：US09263588B2
公开(公告)日：2016-02-16
申请号：US14635034
申请日：2015-03-02
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/78 , H01L21/28 , H01L21/762 , H01L21/8234 , H01L27/115 , H01L29/423 , H01L29/66 , H01L29/06 , H01L29/10
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
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公开(公告)号：US20160155838A1
公开(公告)日：2016-06-02
申请号：US15006522
申请日：2016-01-26
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
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公开(公告)号：US09847422B2
公开(公告)日：2017-12-19
申请号：US15290269
申请日：2016-10-11
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/78 , H01L21/28 , H01L21/762 , H01L21/8234 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/423 , H01L29/66 , H01L29/06 , H01L29/10 , H01L21/308
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
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公开(公告)号：US08969939B2
公开(公告)日：2015-03-03
申请号：US13960434
申请日：2013-08-06
发明人： Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
IPC分类号： H01L29/792 , H01L21/8234 , H01L29/78 , H01L27/115 , H01L21/28 , H01L21/762 , H01L29/423 , H01L29/66
CPC分类号： H01L29/785 , H01L21/28282 , H01L21/308 , H01L21/76224 , H01L21/76232 , H01L21/823481 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/1079 , H01L29/42352 , H01L29/66818 , H01L29/66833 , H01L29/7851 , H01L29/7854 , H01L2029/7858
摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
摘要翻译： 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。
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