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    SEMICONDUCTOR PROCESS DEVICE AND METHOD OF MONITORING SEMICONDUCTOR PROCESS
    1.
    发明申请
    SEMICONDUCTOR PROCESS DEVICE AND METHOD OF MONITORING SEMICONDUCTOR PROCESS 有权

    公开(公告)号：US20250087509A1

    公开(公告)日：2025-03-13

    申请号：US18647044

    申请日：2024-04-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jitae Park ,  Kwangho Lee ,  Seongjin In ,  Keonhee Lim ,  Yoonjae Kim ,  Ilwoo Kim ,  Sangki Nam ,  Sejin Oh

    IPC: H01L21/67 ,  G01J3/443 ,  G05B19/4099 ,  H01J37/32

    Abstract: A semiconductor process device includes a housing including a chamber where a substrate is processed, a viewport in a side wall of the housing, an adapter configured to receive reflected light in which light generated from plasma generated inside the chamber is reflected at a target position on a surface of a structure provided on an upper surface of the substrate, a polarization beam splitter configured to separate the reflected light received from the adapter into P-polarized light and S-polarized light, a spectroscope configured to analyze spectra of the P-polarized light and the S-polarized light, and a control unit configured to monitor a thickness of the structure based on luminous intensity over time at one or more wavelengths of each of the P-polarized light and the S-polarized light, based on results of analyzing the spectra.

    METHOD AND SYSTEM FOR MONITORING SUBSTRATE PROCESSING APPARATUS
    3.
    发明申请
    METHOD AND SYSTEM FOR MONITORING SUBSTRATE PROCESSING APPARATUS 有权

    公开(公告)号：US20240371611A1

    公开(公告)日：2024-11-07

    申请号：US18774793

    申请日：2024-07-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sejin Oh ,  Taemin Earmme ,  Eunwoo Lee ,  Jongwoo Sun

    IPC: H01J37/32 ,  H01J37/244 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

    Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

    Plasma control device and plasma processing system
    4.
    发明授权
    Plasma control device and plasma processing system 有权

    公开(公告)号：US11984297B2

    公开(公告)日：2024-05-14

    申请号：US17711181

    申请日：2022-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sejin Oh ,  Youngdo Kim ,  Sanghun Kim ,  Sungyeol Kim ,  Younghwan Kim ,  Taemin Earmme ,  Changyun Lee ,  Sunghun Jang

    IPC: H01J37/32 ,  H01L21/311

    CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J37/32568 ,  H01L21/31116 ,  H01J2237/334

    Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

    PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
    5.
    发明申请
    PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME 有权

    公开(公告)号：US20220223385A1

    公开(公告)日：2022-07-14

    申请号：US17466184

    申请日：2021-09-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sejin Oh ,  Iksu Byun ,  Taemin Earmme ,  Jongwoo Sun ,  Jewoo Han

    IPC: H01J37/32 ,  H01L21/683 ,  H01L21/311

    Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

    PLASMA LIGHT DETECTION SYSTEM INCLUDING A SCINTILLATING WINDOW
    9.
    发明申请
    PLASMA LIGHT DETECTION SYSTEM INCLUDING A SCINTILLATING WINDOW 有权

    公开(公告)号：US20250085445A1

    公开(公告)日：2025-03-13

    申请号：US18633031

    申请日：2024-04-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chansoo Kang ,  Daewon Kang ,  Minju Kim ,  Tae-Hyun Kim ,  Sang Ki Nam ,  Dougyong Sung ,  Jungmo Yang ,  Sejin Oh ,  Keonhee Lim ,  Junho Im

    IPC: G01T1/36 ,  G01T1/20 ,  H01L21/67

    Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

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