公开(公告)号：US09691618B2

公开(公告)日：2017-06-27

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong Sung ,  Sejin Oh ,  Je-Hun Woo ,  Hyunju Lee ,  Seungkyu Lim ,  Kiho Hwang

IPC: H01L21/26 ,  H01L21/263 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US10971333B2

公开(公告)日：2021-04-06

申请号：US15723837

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub Lee ,  Dougyong Sung ,  Je-Hun Woo ,  Bongseong Kim ,  Juho Lee ,  Yun-Kwang Jeon ,  Junghyun Cho

IPC: H01J37/32 ,  H01L21/67

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

公开(公告)号：US20170186586A1

公开(公告)日：2017-06-29

申请号：US15352952

申请日：2016-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Je-Hun Woo ,  Chungho Cho ,  Dougyong Sung ,  Jang Gyoo Yang ,  Jaechul Jung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32146 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/67069

Abstract: A plasma system includes a source electrode, an RF source power generation unit, an RF source power output unit, and a source power output managing unit. The source power output managing unit determines an amplitude and a duty cycle of a pulse RF source power based on information on an amplitude of a continuous wave RF source power.