公开(公告)号：US12014905B2

公开(公告)日：2024-06-18

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyun Kim ,  Tae-Sun Shin ,  Deokjin Kwon ,  Donghyeon Na ,  Seungbo Shim ,  Sungyong Lim ,  Minjoon Kim ,  Jin Young Bang ,  Bongju Lee ,  Jinseok Lee ,  Sungil Cho ,  Chungho Cho

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01L21/26 ,  H01L21/6831 ,  H01J2237/327

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

公开(公告)号：US11600511B2

公开(公告)日：2023-03-07

申请号：US17189392

申请日：2021-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kihong Cho ,  Kyuchul Shim ,  Chungho Cho ,  Jiho Uh ,  Jinseok Lee ,  Namki Cho

IPC: H01L21/683 ,  H02N13/00 ,  H01J37/32

Abstract: A substrate processing apparatus including an electrostatic chuck on which a substrate is mountable; a ring surrounding the electrostatic chuck, the ring including a first coupling groove; and a first floating electrode in the first coupling groove of the ring, the first floating electrode having a ring shape, wherein a top surface of the first floating electrode is exposed at the ring, and the first floating electrode has a tapered shape including an inclined surface that is inclined in a downward direction toward the electrostatic chuck.

公开(公告)号：US20170186586A1

公开(公告)日：2017-06-29

申请号：US15352952

申请日：2016-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Je-Hun Woo ,  Chungho Cho ,  Dougyong Sung ,  Jang Gyoo Yang ,  Jaechul Jung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32146 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/67069

Abstract: A plasma system includes a source electrode, an RF source power generation unit, an RF source power output unit, and a source power output managing unit. The source power output managing unit determines an amplitude and a duty cycle of a pulse RF source power based on information on an amplitude of a continuous wave RF source power.