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    PLASMA PROCESSING APPARATUS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    2.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权

    公开(公告)号：US20220165550A1

    公开(公告)日：2022-05-26

    申请号：US17397530

    申请日：2021-08-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyoungchon Kim ,  Taemin Earmme ,  Kwangnam Kim ,  Jongwoo Sun

    IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

    Abstract: A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.

    Apparatus and method for plasma etching
    4.
    发明授权
    Apparatus and method for plasma etching 有权

    公开(公告)号：US12211672B2

    公开(公告)日：2025-01-28

    申请号：US18632060

    申请日：2024-04-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

    IPC: H01J37/32

    Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

    Semiconductor manufacturing apparatus
    5.
    发明授权
    Semiconductor manufacturing apparatus 有权

    公开(公告)号：US11430679B2

    公开(公告)日：2022-08-30

    申请号：US16821415

    申请日：2020-03-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwangnam Kim ,  Nohsung Kwak ,  Sungyeon Kim ,  Hyungjun Kim ,  Haejoong Park ,  Jongwoo Sun ,  Sangrok Oh ,  Ilyoung Han ,  Jungpyo Hong

    IPC: H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  H01L21/673

    Abstract: A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.

    METHOD AND SYSTEM FOR MONITORING SUBSTRATE PROCESSING APPARATUS
    7.
    发明申请
    METHOD AND SYSTEM FOR MONITORING SUBSTRATE PROCESSING APPARATUS 有权

    公开(公告)号：US20240371611A1

    公开(公告)日：2024-11-07

    申请号：US18774793

    申请日：2024-07-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sejin Oh ,  Taemin Earmme ,  Eunwoo Lee ,  Jongwoo Sun

    IPC: H01J37/32 ,  H01J37/244 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

    Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

    PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
    8.
    发明申请
    PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME 有权

    公开(公告)号：US20220223385A1

    公开(公告)日：2022-07-14

    申请号：US17466184

    申请日：2021-09-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sejin Oh ,  Iksu Byun ,  Taemin Earmme ,  Jongwoo Sun ,  Jewoo Han

    IPC: H01J37/32 ,  H01L21/683 ,  H01L21/311

    Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

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