公开(公告)号：US11430679B2

公开(公告)日：2022-08-30

申请号：US16821415

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangnam Kim ,  Nohsung Kwak ,  Sungyeon Kim ,  Hyungjun Kim ,  Haejoong Park ,  Jongwoo Sun ,  Sangrok Oh ,  Ilyoung Han ,  Jungpyo Hong

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.

公开(公告)号：US12087554B2

公开(公告)日：2024-09-10

申请号：US16905018

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyeon Kim ,  Jungpyo Hong ,  Kwangnam Kim ,  Hyungjun Kim ,  Jongwoo Sun

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32743 ,  H01L21/67069 ,  H01J2237/334

Abstract: A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.

公开(公告)号：US20220165550A1

公开(公告)日：2022-05-26

申请号：US17397530

申请日：2021-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungchon Kim ,  Taemin Earmme ,  Kwangnam Kim ,  Jongwoo Sun

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.