PLASMA PROCESSING APPARATUS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20220165550A1

    公开(公告)日:2022-05-26

    申请号:US17397530

    申请日:2021-08-09

    Abstract: A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.

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