公开(公告)号：US11984304B2

公开(公告)日：2024-05-14

申请号：US17543794

申请日：2021-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US12211672B2

公开(公告)日：2025-01-28

申请号：US18632060

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US20240258084A1

公开(公告)日：2024-08-01

申请号：US18632060

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US20240213071A1

公开(公告)日：2024-06-27

申请号：US18396553

申请日：2023-12-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junho IM ,  Younseon Wang ,  Yongwoo Kim ,  Taehwa Kim ,  Inseok Seo ,  Kiseok Lee

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32715

Abstract: An electrostatic chuck includes an electrostatic chuck body having a step portion protruding from a lower end, an adhesive layer disposed on an upper surface of the electrostatic chuck body, a ceramic puck adhered to the adhesive layer and having an edge protruding from the upper surface of the electrostatic chuck body, and a sealant disposed between the step portion and the edge of the ceramic puck and configured to block reaction gas from permeating into the adhesive layer. The sealant includes a coating layer disposed on an external surface thereof, and the coating layer includes a metal oxide including a single rare earth oxide and/or a multilayer heterogeneous metal oxide.

公开(公告)号：US20220328291A1

公开(公告)日：2022-10-13

申请号：US17543794

申请日：2021-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.