公开(公告)号：US20210111056A1

公开(公告)日：2021-04-15

申请号：US16901228

申请日：2020-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kuihyun Yoon ,  Jaehak Lee ,  Yunhwan Kim ,  Jongkeun Lee ,  Kyohyeok Kim ,  Jewoo Han

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.

公开(公告)号：US12211672B2

公开(公告)日：2025-01-28

申请号：US18632060

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US20220223385A1

公开(公告)日：2022-07-14

申请号：US17466184

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Iksu Byun ,  Taemin Earmme ,  Jongwoo Sun ,  Jewoo Han

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/311

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

公开(公告)号：US11984304B2

公开(公告)日：2024-05-14

申请号：US17543794

申请日：2021-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US11450545B2

公开(公告)日：2022-09-20

申请号：US16683707

申请日：2019-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Incheol Song ,  Hongmin Yoon ,  Jihyun Lim ,  Masayuki Tomoyasu ,  Jewoo Han

IPC: H01L21/683 ,  H01J37/32

Abstract: According to some embodiments, a semiconductor substrate processing apparatus includes a housing, a plasma source unit, an electrostatic chuck, and a ring unit. The housing encloses a process chamber. The plasma source unit is connected to the housing, and includes a shower head and a fixing ring positioned to support the shower head. The shower head includes an upper electrode mounted on the fixing ring, and includes injection holes passing through part of the upper electrode and configured to inject gas into the chamber. The electrostatic chuck is connected to the housing and includes a lower electrode, and is for mounting a semiconductor substrate thereon. The ring unit is mounted on an edge portion of the electrostatic chuck, and includes a focus ring and a cover ring surrounding the focus ring. One of the lower electrode and the upper electrode is connected to a high frequency power supply, and the other of the lower electrode and the upper electrode is connected to ground. The focus ring has an inner side surface, and an opposite outer side surface that contacts the cover ring, and a width between the inner side surface and the outer side surface of the focus ring is a first width. The cover ring has an inner side surface that contacts the outer side surface of the focus ring, and an outer side surface, and a width between the inner side surface and the outer side surface of the cover ring is a second width. The first width is between 2 and 10 time the second width.

公开(公告)号：US20240258084A1

公开(公告)日：2024-08-01

申请号：US18632060

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US11929239B2

公开(公告)日：2024-03-12

申请号：US17466184

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Iksu Byun ,  Taemin Earmme ,  Jongwoo Sun ,  Jewoo Han

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32174 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/31116 ,  H01L21/6833 ,  H01L21/68735 ,  H01J2237/334

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

公开(公告)号：US11515193B2

公开(公告)日：2022-11-29

申请号：US16901228

申请日：2020-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kuihyun Yoon ,  Jaehak Lee ,  Yunhwan Kim ,  Jongkeun Lee ,  Kyohyeok Kim ,  Jewoo Han

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.

公开(公告)号：US20220328291A1

公开(公告)日：2022-10-13

申请号：US17543794

申请日：2021-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US11251022B2

公开(公告)日：2022-02-15

申请号：US16871427

申请日：2020-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Jeon ,  Dougyong Sung ,  Jongwoo Sun ,  Minkyu Sung ,  Kimoon Jung ,  Seongha Jeong ,  Ungyo Jung ,  Jewoo Han

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.