公开(公告)号：US20230307217A1

公开(公告)日：2023-09-28

申请号：US18123068

申请日：2023-03-17

Applicant: SAMSUNG-ELECTRONICS CO., LTD.

Inventor： Dooyoung Gwak ,  Soonam Park ,  Janggyoo Yang ,  Myungsun Choi ,  Jaemin Ha

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/66

CPC classification number: H01J37/32862 ,  H01J37/32743 ,  H01L21/31144 ,  H01L21/31116 ,  H01L22/10 ,  H01J37/32788 ,  H01J2237/3343 ,  H01J2237/24485

Abstract: An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.

公开(公告)号：US11075088B2

公开(公告)日：2021-07-27

申请号：US16812925

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11582 ,  H01L49/02 ,  H01J37/32

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US12020903B2

公开(公告)日：2024-06-25

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01L21/3065 ,  H01L21/6833 ,  H03H7/38 ,  H01J2237/334

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US11545341B2

公开(公告)日：2023-01-03

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20200234964A1

公开(公告)日：2020-07-23

申请号：US16812925

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US20170229312A1

公开(公告)日：2017-08-10

申请号：US15423003

申请日：2017-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong PARK ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L27/11582 ,  H01L28/90

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US11658039B2

公开(公告)日：2023-05-23

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Kim ,  Nam Kyun Kim ,  Sungjun Ann ,  Myungsun Choi ,  Dougyong Sung ,  Seungbo Shim

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/6833 ,  H01J2237/3347

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

公开(公告)号：US11075089B2

公开(公告)日：2021-07-27

申请号：US16812953

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11582 ,  H01L49/02 ,  H01J37/32

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.