公开(公告)号：US11658039B2

公开(公告)日：2023-05-23

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Kim ,  Nam Kyun Kim ,  Sungjun Ann ,  Myungsun Choi ,  Dougyong Sung ,  Seungbo Shim

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/6833 ,  H01J2237/3347

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.