公开(公告)号：US11538660B2

公开(公告)日：2022-12-27

申请号：US17242019

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoong Chung ,  Nam Kyun Kim ,  Naohiko Okunishi ,  Kyung-Sun Kim ,  Seung Bo Shim ,  Sang-Ho Lee ,  Kang Min Jeon

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

公开(公告)号：US12014905B2

公开(公告)日：2024-06-18

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyun Kim ,  Tae-Sun Shin ,  Deokjin Kwon ,  Donghyeon Na ,  Seungbo Shim ,  Sungyong Lim ,  Minjoon Kim ,  Jin Young Bang ,  Bongju Lee ,  Jinseok Lee ,  Sungil Cho ,  Chungho Cho

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01L21/26 ,  H01L21/6831 ,  H01J2237/327

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

公开(公告)号：US12046451B2

公开(公告)日：2024-07-23

申请号：US17750653

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyun Kim ,  Seung Bo Shim ,  Doug Yong Sung ,  Seung Han Baek ,  Ju Ho Lee

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/3065

Abstract: A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.

公开(公告)号：US11658039B2

公开(公告)日：2023-05-23

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Kim ,  Nam Kyun Kim ,  Sungjun Ann ,  Myungsun Choi ,  Dougyong Sung ,  Seungbo Shim

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/6833 ,  H01J2237/3347

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.