公开(公告)号：US11538660B2

公开(公告)日：2022-12-27

申请号：US17242019

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoong Chung ,  Nam Kyun Kim ,  Naohiko Okunishi ,  Kyung-Sun Kim ,  Seung Bo Shim ,  Sang-Ho Lee ,  Kang Min Jeon

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.