公开(公告)号：US20190287766A1

公开(公告)日：2019-09-19

申请号：US16182737

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGJEAN JEON ,  Jinyoung PARK ,  CHANHOON PARK ,  Hoyong PARK ,  JIN YOUNG BANG ,  JungHwan UM ,  IL SUP CHOI ,  Je-Woo HAN

IPC: H01J37/32 ,  H01L21/683

Abstract: A system for fabricating a semiconductor device may include a chamber, an electrostatic chuck used to load a substrate, a power source supplying an RF power to the electrostatic chuck, an impedance matcher between the power source and the electrostatic chuck, and a power transmission unit connecting the electrostatic chuck to the impedance matcher. The power transmission unit may include a power rod, which is connected to the electrostatic chuck and has a first outer diameter, and a coaxial cable. The coaxial cable may include an inner wire, an outer wire, and a dielectric material between the outer and inner wires. The inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter. The outer wire is connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter. A ratio of the first inner diameter to the second outer diameter is greater than a dielectric constant of the dielectric material and less than three times the dielectric constant of the dielectric material.

公开(公告)号：US20200234965A1

公开(公告)日：2020-07-23

申请号：US16812953

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong PARK ,  Namjun KANG ,  Dougyong SUNG ,  Seungbo SHIM ,  Junghyun CHO ,  Myungsun CHOI

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US20170229312A1

公开(公告)日：2017-08-10

申请号：US15423003

申请日：2017-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong PARK ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L27/11582 ,  H01L28/90

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.