公开(公告)号：US09978632B2

公开(公告)日：2018-05-22

申请号：US14730192

申请日：2015-06-03

Applicant: Applied Materials, Inc.

Inventor： Khiem Nguyen ,  Saravjeet Singh ,  Amitabh Sabharwal

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/68742 ,  C23C16/458 ,  H01J37/32715 ,  H01J37/32788

Abstract: The present disclosure provides a substrate support assembly includes a substrate pedestal having an upper surface for receiving and supporting a substrate, a cover plate disposed on the substrate support pedestal, and two or more lift pins movably disposed through the substrate support pedestal and the cover plate. The cover plate includes a disk body having a central opening. The two or more lift pins are self supportive. Each of the two or more lift pins comprises one or more contact pads, and the contact pads of the lift pins extend into to the central opening of the cover plate to receive and support a substrate at an edge region of the substrate.

公开(公告)号：US20180108529A1

公开(公告)日：2018-04-19

申请号：US15593187

申请日：2017-05-11

Applicant: Lam Research Corporation

Inventor： William T. Lee ,  Bart J. van Schravendijk ,  David Charles Smith ,  Michal Danek ,  Patrick A. Van Cleemput ,  Ramesh Chandrasekharan

IPC: H01L21/28 ,  H01L21/02 ,  H01J37/32 ,  H01L29/51 ,  G02F1/1335

CPC classification number: H01L21/28202 ,  G02F1/133502 ,  H01J37/3244 ,  H01J37/32788 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/28211 ,  H01L29/513

Abstract: Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO2/TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.

公开(公告)号：US20170309457A1

公开(公告)日：2017-10-26

申请号：US15139174

申请日：2016-04-26

Applicant: ASM IP Holding B.V.

Inventor： Kazunori FURUKAWAHARA

IPC: H01J37/32 ,  F16K43/00 ,  H01L21/67

CPC classification number: H01J37/32513 ,  F16K3/029 ,  F16K3/182 ,  F16K3/188 ,  F16K43/001 ,  F16K51/02 ,  H01J37/32082 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32899 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67126

Abstract: A substrate processing apparatus includes a chamber in which a first processing space, a second processing space, a connecting space connecting the first processing space and the second processing space, a first hole connecting with the connecting space and a second hole connecting with the connecting space are formed, a first gate valve having a first valve element and closing the first hole, the first valve element sliding in the first hole, opening and closing the connecting space, and a second gate valve having a second valve element and closing the second hole, the second valve element sliding in the second hole, opening and closing the connecting space, wherein a region in which the first hole and the connecting space connect with each other and a region in which the second hole and the connecting space connect with each other are one common region.

公开(公告)号：US20170213708A1

公开(公告)日：2017-07-27

申请号：US15328818

申请日：2015-08-05

Applicant: GRENZEBACH MASCHINENBAU GMBH

Inventor： Gerd KLEIDETER ,  Thomas KRISCH ,  Joerg FIUKOWSKI ,  Olaf GAWER

IPC: H01J37/32 ,  C23C14/56 ,  C23C14/52 ,  H01J37/34

CPC classification number: H01J37/32834 ,  C23C14/352 ,  C23C14/52 ,  C23C14/562 ,  C23C14/564 ,  C23C14/568 ,  H01J37/32513 ,  H01J37/32761 ,  H01J37/32779 ,  H01J37/32788 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3408

Abstract: Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

公开(公告)号：US20170198391A1

公开(公告)日：2017-07-13

申请号：US15073951

申请日：2016-03-18

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Hiroshi ASHIHARA

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/34 ,  C23C16/50 ,  H01J37/32 ,  B25J11/00 ,  C23C16/455

CPC classification number: C23C16/4412 ,  B25J11/0095 ,  C23C16/345 ,  C23C16/45542 ,  H01J37/32522 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32834 ,  H01J37/32899 ,  H01L21/67167

Abstract: A technique for performing high-temperature substrate processing includes a plurality of chambers where substrates are processed, wherein the chambers are disposed adjacent to one another; a gas supply unit configured to alternately supply first and second gasses to each of the chambers; a first exhaust pipe installed in each of the chambers and configured to exhaust the first and second gasses; a first heater installed at the first exhaust pipe and configured to heat the first exhaust pipe to a temperature higher than a temperature whereat a source of the first gas is vaporized under vapor pressure; an electronic box installed at each of the chambers, wherein the electronic box is disposed adjacent to a gas box accommodating a portion of the first exhaust pipe; and a thermal reduction structure surrounding the first exhaust pipe and configured to reduce heat from the first heater being conducted to the electronic box.

公开(公告)号：US20150255258A1

公开(公告)日：2015-09-10

申请号：US14424483

申请日：2013-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa Nozawa ,  Masahide Iwasaki ,  Takenao Nemoto ,  Yasuo Kobayashi ,  Takehisa Saito

IPC: H01J37/32

CPC classification number: H01J37/32779 ,  C23C16/4584 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32513 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J37/32752 ,  H01J37/32788 ,  H01J37/32834 ,  H05H1/46 ,  H05H2001/463

Abstract: Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber.

Abstract translation: 本发明提供一种等离子体处理装置，其特征在于，包括：旋转安装台，其由可旋转地配置在处理室内的旋转轴支撑，并具有沿圆周方向并排设置的多个基板配置单元; 处理气体供给部，其将处理气体供给到处理室中; 等离子体产生部分，其中设置在处理室的天花板上以面对旋转安装台并用于产生处理气体的等离子体的多个微波引入机构布置成彼此间隔开的多行 在旋转安装台向外侧旋转的基板的移动路径的内侧，通过沿周向环状地并排设置微波导入机构而形成各列微波导入机构， 以及排出处理室内部的排气单元。

公开(公告)号：US20130059447A1

公开(公告)日：2013-03-07

申请号：US13665174

申请日：2012-10-31

Applicant: LAM RESEARCH CORPORATION

Inventor： Brian McMillin ,  Jose V. Tong ,  Yen-Kun Victor Wang

IPC: H01L21/683 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32788 ,  H01L21/68742

Abstract: Provided is a substrate dechucking system of a plasma processing chamber adapted to remove a substrate from an ESC with reduction in voltage potential spike during dechucking of the substrate.

Abstract translation: 提供了一种等离子体处理室的衬底解扣系统，其适于在衬底脱扣时减小电压尖峰从ESC移除衬底。

公开(公告)号：US07994026B2

公开(公告)日：2011-08-09

申请号：US12523191

申请日：2008-11-12

Applicant: Atsushi Harikai ,  Kiyoshi Arita ,  Tetsuhiro Iwai

Inventor： Atsushi Harikai ,  Kiyoshi Arita ,  Tetsuhiro Iwai

IPC: H01L21/301

CPC classification number: H01L21/67069 ,  H01J37/32743 ,  H01J37/32788 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/78

Abstract: A plasma dicing apparatus in which a semiconductor wafer with a protective sheet stuck thereonto covering the entire circuit-forming surface and with an etching-resistant mask member stuck on the back surface opposite to the circuit-forming surface is mounted on a mounting stage; plasma etching is performed using the mask member as a mask; and the semiconductor wafer is diced into plural semiconductor chips. The plasma dicing apparatus includes a ring-shaped frame member retaining the outer circumference of the mask member extending off the outer circumference of the semiconductor wafer. The mounting stage is composed of a wafer supporting part supporting a semiconductor wafer and a frame member supporting part supporting the frame member. This facilitates carrying a semiconductor wafer into and out of the vacuum chamber.

Abstract translation: 一种等离子体切割装置，其中具有粘附在其上以覆盖整个电路形成表面的保护片的半导体晶片和粘附在与电路形成表面相对的背面上的耐蚀刻掩模构件安装在安装台上; 使用掩模构件作为掩模进行等离子体蚀刻; 将半导体晶片切割成多个半导体芯片。 等离子体切割装置包括保持从半导体晶片的外周延伸的掩模构件的外周的环形框架构件。 安装台由支撑半导体晶片的晶片支撑部件和支撑框架部件的框架部件支撑部件构成。 这有助于将半导体晶片进入和离开真空室。

公开(公告)号：US20080216865A1

公开(公告)日：2008-09-11

申请号：US11834046

申请日：2007-08-06

Applicant: Masunori Ishihara ,  Masamichi Sakaguchi ,  Yasuhiro Nishimori ,  Yutaka Kudou ,  Satoshi Une

Inventor： Masunori Ishihara ,  Masamichi Sakaguchi ,  Yasuhiro Nishimori ,  Yutaka Kudou ,  Satoshi Une

IPC: B08B6/00

CPC classification number: H01J37/32743 ,  H01J37/3244 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/67213

Abstract: The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.

Abstract translation: 本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理 房间。 本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同 到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。

公开(公告)号：US20080138535A1

公开(公告)日：2008-06-12

申请号：US11874365

申请日：2007-10-18

Applicant: Young Joo HWANG

Inventor： Young Joo HWANG

IPC: C23C16/00 ,  H05H1/24

CPC classification number: H01J37/32788 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/68742

Abstract: A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

Abstract translation: 提供了一种用于等离子体处理装置的基板损伤预防系统和方法。 该系统可以包括可以在其上安装基板的下电极，可以向安装有基板的下电极的上表面供应惰性气体的惰性气体供应单元和可供应空气的空气供应单元 到下电极的上表面。 可以在下电极和基板之间供应惰性气体，以便在卡盘期间控制基板的温度。 在脱扣时可以在下电极和基板之间供应空气，以便允许基板容易地与下电极分离。