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    HYBRID EDGE RING FOR PLASMA WAFER PROCESSING
    1.
    发明申请
    HYBRID EDGE RING FOR PLASMA WAFER PROCESSING 有权
    用于等离子体加工的混合边缘环

    公开(公告)号：US20140235063A1

    公开(公告)日：2014-08-21

    申请号：US14175509

    申请日：2014-02-07

    Applicant: Lam Research Corporation

    Inventor： Brian McMillin ,  Arthur Sato ,  Neil Benjamin

    IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898

    Abstract: An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.

    Abstract translation: 公开了用于等离子体处理室中的边缘环组件，其包括定位在基板的环形表面上的RF导电环，并且被配置为围绕基板的上部并且延伸到位于基板上的晶片的外边缘下方 基板的上表面，以及晶片边缘保护环，其位于RF导电环的上表面上方并且被配置为在晶片的外边缘上延伸。 保护环具有均匀厚度的内边缘部分，其在晶片的外边缘延伸，从内边缘部分向外延伸到水平上表面的圆锥形上表面，位于上部的内部环形凹部 RF的表面导电并且构造成在晶片的外边缘上延伸。

    Hybrid edge ring for plasma wafer processing
    2.
    发明授权
    Hybrid edge ring for plasma wafer processing 有权

    公开(公告)号：US09997381B2

    公开(公告)日：2018-06-12

    申请号：US14175509

    申请日：2014-02-07

    Applicant: Lam Research Corporation

    Inventor： Brian McMillin ,  Arthur Sato ,  Neil Benjamin

    IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/768

    CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898

    Abstract: An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.

    Method of wet cleaning aluminum chamber parts
    3.
    发明授权
    Method of wet cleaning aluminum chamber parts 有权
    铝制室内湿法清洗方法

    公开(公告)号：US09387521B2

    公开(公告)日：2016-07-12

    申请号：US14041385

    申请日：2013-09-30

    Applicant: Lam Research Corporation

    Inventor： Hong Shih ,  Fan-Cheung Sze ,  Brian McMillin ,  John Daugherty ,  Yan Fang ,  Duane Outka ,  Tuochuan Huang ,  Sivakami Ramanathan

    IPC: B08B7/04 ,  B08B7/02 ,  B24C1/00 ,  B08B7/00 ,  H01L21/67

    CPC classification number: B08B7/04 ,  B08B7/0021 ,  B08B7/028 ,  B24C1/003 ,  H01L21/67051

    Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

    Abstract translation: 一种湿式清洁铝部件的方法，该部件具有裸铝表面和阳极氧化铝表面。 该方法包括将铝部件的表面以约35至约45psi的二氧化碳干冰喷砂，掩蔽铝部分以隐藏裸铝表面，将干冰喷砂和掩蔽的铝部分浸入等于或高于约60°的去离子水 C.在完成在去离子水中浸泡之后用研磨垫和去离子水洗涤铝部分，并按照所述顺序重复浸泡和洗涤至少三次。

    METHOD OF WET CLEANING ALUMINUM CHAMBER PARTS
    5.
    发明申请
    METHOD OF WET CLEANING ALUMINUM CHAMBER PARTS 有权
    清洁铝合金室部件的方法

    公开(公告)号：US20140150819A1

    公开(公告)日：2014-06-05

    申请号：US14041385

    申请日：2013-09-30

    Applicant: Lam Research Corporation

    Inventor： Hong Shih ,  Fan-Cheung Sze ,  Brian McMillin ,  John Daugherty ,  Yan Fang ,  Duane Outka ,  Tuochuan Huang ,  Sivakami Ramanathan

    IPC: H01L21/67

    CPC classification number: B08B7/04 ,  B08B7/0021 ,  B08B7/028 ,  B24C1/003 ,  H01L21/67051

    Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

    Abstract translation: 一种湿式清洁铝部件的方法，该部件具有裸铝表面和阳极氧化铝表面。 该方法包括将铝部件的表面以约35至约45psi的二氧化碳干冰喷砂，掩蔽铝部分以隐藏裸铝表面，将干冰喷砂和掩蔽的铝部分浸入等于或高于约60°的去离子水 C.在完成在去离子水中浸泡之后用研磨垫和去离子水洗涤铝部分，并按照所述顺序重复浸泡和洗涤至少三次。

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