Invention Application
- Patent Title: HYBRID EDGE RING FOR PLASMA WAFER PROCESSING
- Patent Title (中): 用于等离子体加工的混合边缘环
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Application No.: US14175509Application Date: 2014-02-07
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Publication No.: US20140235063A1Publication Date: 2014-08-21
- Inventor: Brian McMillin , Arthur Sato , Neil Benjamin
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/3065 ; H01J37/32

Abstract:
An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.
Public/Granted literature
- US09997381B2 Hybrid edge ring for plasma wafer processing Public/Granted day:2018-06-12
Information query
IPC分类: