公开(公告)号：US09123651B2

公开(公告)日：2015-09-01

申请号：US13851605

申请日：2013-03-27

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  C23C16/44

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US09546432B2

公开(公告)日：2017-01-17

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: C25D11/04 ,  C25D11/02 ,  H01L21/3065 ,  H01L21/02 ,  C25D11/16 ,  C25D11/12 ,  C23C28/00 ,  C23C24/00 ,  H01L21/67 ,  C23C16/44 ,  H01L21/78

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US09337002B2

公开(公告)日：2016-05-10

申请号：US13796751

申请日：2013-03-12

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: C22C21/00 ,  C23C24/04 ,  B32B15/01 ,  H01J37/32 ,  C22C21/08 ,  C23C28/00 ,  H01J37/00

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

公开(公告)号：US20140295670A1

公开(公告)日：2014-10-02

申请号：US13851605

申请日：2013-03-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  H01L21/67

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US20140150819A1

公开(公告)日：2014-06-05

申请号：US14041385

申请日：2013-09-30

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Fan-Cheung Sze ,  Brian McMillin ,  John Daugherty ,  Yan Fang ,  Duane Outka ,  Tuochuan Huang ,  Sivakami Ramanathan

IPC: H01L21/67

CPC classification number: B08B7/04 ,  B08B7/0021 ,  B08B7/028 ,  B24C1/003 ,  H01L21/67051

Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

Abstract translation: 一种湿式清洁铝部件的方法，该部件具有裸铝表面和阳极氧化铝表面。 该方法包括将铝部件的表面以约35至约45psi的二氧化碳干冰喷砂，掩蔽铝部分以隐藏裸铝表面，将干冰喷砂和掩蔽的铝部分浸入等于或高于约60°的去离子水 C.在完成在去离子水中浸泡之后用研磨垫和去离子水洗涤铝部分，并按照所述顺序重复浸泡和洗涤至少三次。

公开(公告)号：US09387521B2

公开(公告)日：2016-07-12

申请号：US14041385

申请日：2013-09-30

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Fan-Cheung Sze ,  Brian McMillin ,  John Daugherty ,  Yan Fang ,  Duane Outka ,  Tuochuan Huang ,  Sivakami Ramanathan

IPC: B08B7/04 ,  B08B7/02 ,  B24C1/00 ,  B08B7/00 ,  H01L21/67

CPC classification number: B08B7/04 ,  B08B7/0021 ,  B08B7/028 ,  B24C1/003 ,  H01L21/67051

Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

Abstract translation: 一种湿式清洁铝部件的方法，该部件具有裸铝表面和阳极氧化铝表面。 该方法包括将铝部件的表面以约35至约45psi的二氧化碳干冰喷砂，掩蔽铝部分以隐藏裸铝表面，将干冰喷砂和掩蔽的铝部分浸入等于或高于约60°的去离子水 C.在完成在去离子水中浸泡之后用研磨垫和去离子水洗涤铝部分，并按照所述顺序重复浸泡和洗涤至少三次。

公开(公告)号：US20140272459A1

公开(公告)日：2014-09-18

申请号：US13796751

申请日：2013-03-12

Applicant: LAM RESEARCH CORPORATION

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  C22C21/00 ,  C23C4/12

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。