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公开(公告)号：US20140272459A1
公开(公告)日：2014-09-18
申请号：US13796751
申请日：2013-03-12
Applicant: LAM RESEARCH CORPORATION
Inventor： John Daugherty , Hong Shih , Lin Xu , Anthony Amadio , Robert G. O'Neill , Peter Holland , Sivakami Ramanathan , Tae Won Kim , Duane Outka , John Michael Kerns , Sonia Castillo
IPC: H01J37/32 , H01L21/3065 , H01L21/02 , C22C21/00 , C23C4/12
CPC classification number: H01J37/32477 , C22C21/00 , C22C21/08 , C23C24/04 , C23C28/322 , C23C28/345 , H01J37/32495 , H01J37/32559 , Y10T428/12764 , Y10T428/218 , Y10T428/24355 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/31678
Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.
Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。
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2.发明授权Dense oxide coated component of a plasma processing chamber and method of manufacture thereof 有权等离子体处理室的密集氧化物涂层组件及其制造方法公开(公告)号：US09546432B2
公开(公告)日：2017-01-17
申请号：US14817742
申请日：2015-08-04
Applicant: LAM RESEARCH CORPORATION
Inventor： Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
IPC: C25D11/04 , C25D11/02 , H01L21/3065 , H01L21/02 , C25D11/16 , C25D11/12 , C23C28/00 , C23C24/00 , H01L21/67 , C23C16/44 , H01L21/78
CPC classification number: C25D11/026 , C23C16/4404 , C23C24/00 , C23C28/322 , C23C28/345 , C25D11/04 , C25D11/12 , C25D11/16 , H01L21/02274 , H01L21/3065 , H01L21/67017 , H01L21/67069 , H01L21/78 , Y10T428/12479 , Y10T428/12549 , Y10T428/1259
Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。
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3.发明申请COMPONENTS OF PLASMA PROCESSING CHAMBERS HAVING TEXTURED PLASMA RESISTANT COATINGS 审中-公开具有纹理抗菌涂料的等离子体加工釜组件公开(公告)号：US20130102156A1
公开(公告)日：2013-04-25
申请号：US13625489
申请日：2012-09-24
Applicant: Lam Research Corporation
Inventor： Tom Stevenson , Hong Shih , Robert G. O'Neill , Tae Won Kim , Raphael Casaes , Yan Fang
CPC classification number: H01J37/32477 , Y10T428/218 , Y10T428/24471
Abstract: A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating. The texture can be provided by contacting the plasma exposed surface with a polishing pad having a grit size effective to provide intersecting scratches with a depth of 1 to 2 microns.
Abstract translation: 等离子体处理室的组件包括其上具有高致密等离子体涂层的三维体，其中涂层的等离子体暴露表面具有抑制由等离子体暴露表面上的膜积累产生颗粒的结构。 该组件可以是电感耦合等离子体反应器的窗口，其中窗口包括织构化的氧化钇涂层。 可以通过使等离子体暴露的表面与具有有效的砂粒尺寸的抛光垫接触以提供1至2微米的深度的交叉划痕来提供纹理。
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4.发明授权公开(公告)号：US09767996B2
公开(公告)日：2017-09-19
申请号：US14832901
申请日：2015-08-21
Applicant: Lam Research Corporation
Inventor： Robert G. O'Neill , Neil M. P. Benjamin , Jie Zhang
IPC: H01L21/306 , H01J37/32
CPC classification number: H01J37/32651 , H01J37/32119 , H01J37/3244 , H01J37/32623 , H01J37/32697
Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.
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5.发明授权Dense oxide coated component of a plasma processing chamber and method of manufacture thereof 有权等离子体处理室的密集氧化物涂层组件及其制造方法公开(公告)号：US09123651B2
公开(公告)日：2015-09-01
申请号：US13851605
申请日：2013-03-27
Applicant: Lam Research Corporation
Inventor： Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
IPC: H01L21/3065 , H01L21/02 , C25D11/02 , C23C16/44
CPC classification number: C25D11/026 , C23C16/4404 , C23C24/00 , C23C28/322 , C23C28/345 , C25D11/04 , C25D11/12 , C25D11/16 , H01L21/02274 , H01L21/3065 , H01L21/67017 , H01L21/67069 , H01L21/78 , Y10T428/12479 , Y10T428/12549 , Y10T428/1259
Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。
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Patent Agency Ranking
6.发明申请System, Method and Apparatus for RF Power Compensation in Plasma Etch Chamber 有权等离子体蚀刻室中RF功率补偿的系统，方法和装置公开(公告)号：US20140349417A1
公开(公告)日：2014-11-27
申请号：US13901535
申请日：2013-05-23
Applicant: Lam Research Corporation
Inventor： Robert G. O'Neill , Arthur Sato , Eric Tonnis , Seetharaman Ramachandran , Shang-I Chou
IPC: H01L21/3065 , H01L21/66 , H01L21/67
CPC classification number: H01L22/12 , H01J37/32082 , H01J37/32935 , H01J37/3299
Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.
Abstract translation: 向目标等离子体室施加功率的系统和方法包括：表征目标等离子体室的无等离子体性能斜率，将选定的等离子体配方施加到目标室中的第一晶片，所选择的等离子体配方包括所选择的功率设定点 值并监视RF电极上的配方因子值。 产生比较参考室和目标室的工艺效率比，使用目标室和参考室的无等离子体性能斜率作为输入的产生以及所监视的配方因子值。 计算调整后的功率设定点值，被配置为使得输送到目标室中形成的等离子体的功率的调整功率设定点匹配将被输送到在基准室中形成的参考等离子体的功率。
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7.发明申请公开(公告)号：US20170053782A1
公开(公告)日：2017-02-23
申请号：US14832901
申请日：2015-08-21
Applicant: Lam Research Corporation
Inventor： Robert G. O'Neill , Neil M. P. Benjamin , Jie Zhang
IPC: H01J37/32
CPC classification number: H01J37/32651 , H01J37/32119 , H01J37/3244 , H01J37/32623 , H01J37/32697
Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.
Abstract translation: 本文公开了各种实施例，包括用于具有多个电引线的等离子体处理室中的静电屏幕。 多个花瓣组设置有每个瓣组，其包括基本平坦的结构，其中每个花瓣组电连接到多个电引线中的至少一个电引线，并且其中每个花瓣组与任何其它花瓣组绝缘， 其中所述多个花瓣组围绕垂直轴线形成径向对称。 每个基本上平坦的结构包括导电环的扇形区和多个导电瓣，每个导电瓣与导电环的扇形部分连接，其中至少一个电引线连接到每个花瓣组中基本相等的电位。
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8.发明授权System, method and apparatus for RF power compensation in plasma etch chamber 有权用于等离子体蚀刻室中RF功率补偿的系统，方法和装置公开(公告)号：US09412670B2
公开(公告)日：2016-08-09
申请号：US13901535
申请日：2013-05-23
Applicant: Lam Research Corporation
Inventor： Robert G. O'Neill , Arthur Sato , Eric Tonnis , Seetharaman Ramachandran , Shang-I Chou
CPC classification number: H01L22/12 , H01J37/32082 , H01J37/32935 , H01J37/3299
Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.
Abstract translation: 向目标等离子体室施加功率的系统和方法包括：表征目标等离子体室的无等离子体性能斜率，将选定的等离子体配方施加到目标室中的第一晶片，所选择的等离子体配方包括所选择的功率设定点 值并监视RF电极上的配方因子值。 产生比较参考室和目标室的工艺效率比，使用目标室和参考室的无等离子体性能斜率作为输入的产生以及所监视的配方因子值。 计算调整后的功率设定点值，被配置为使得输送到目标室中形成的等离子体的功率的调整功率设定点匹配将被输送到在基准室中形成的参考等离子体的功率。
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公开(公告)号：US09337002B2
公开(公告)日：2016-05-10
申请号：US13796751
申请日：2013-03-12
Applicant: Lam Research Corporation
Inventor： John Daugherty , Hong Shih , Lin Xu , Anthony Amadio , Robert G. O'Neill , Peter Holland , Sivakami Ramanathan , Tae Won Kim , Duane Outka , John Michael Kerns , Sonia Castillo
CPC classification number: H01J37/32477 , C22C21/00 , C22C21/08 , C23C24/04 , C23C28/322 , C23C28/345 , H01J37/32495 , H01J37/32559 , Y10T428/12764 , Y10T428/218 , Y10T428/24355 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/31678
Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.
Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。
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10.发明申请DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF 有权等离子体加工室的氧化涂层组分及其制造方法公开(公告)号：US20140295670A1
公开(公告)日：2014-10-02
申请号：US13851605
申请日：2013-03-27
Applicant: LAM RESEARCH CORPORATION
Inventor： Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
IPC: H01L21/3065 , H01L21/02 , C25D11/02 , H01L21/67
CPC classification number: C25D11/026 , C23C16/4404 , C23C24/00 , C23C28/322 , C23C28/345 , C25D11/04 , C25D11/12 , C25D11/16 , H01L21/02274 , H01L21/3065 , H01L21/67017 , H01L21/67069 , H01L21/78 , Y10T428/12479 , Y10T428/12549 , Y10T428/1259
Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。
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