公开(公告)号：US20130102156A1

公开(公告)日：2013-04-25

申请号：US13625489

申请日：2012-09-24

Applicant: Lam Research Corporation

Inventor： Tom Stevenson ,  Hong Shih ,  Robert G. O'Neill ,  Tae Won Kim ,  Raphael Casaes ,  Yan Fang

IPC: B05B1/00 ,  B32B3/02 ,  H01L21/3065 ,  B32B3/30 ,  B05D3/12 ,  C23C16/44

CPC classification number: H01J37/32477 ,  Y10T428/218 ,  Y10T428/24471

Abstract: A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating. The texture can be provided by contacting the plasma exposed surface with a polishing pad having a grit size effective to provide intersecting scratches with a depth of 1 to 2 microns.

Abstract translation: 等离子体处理室的组件包括其上具有高致密等离子体涂层的三维体，其中涂层的等离子体暴露表面具有抑制由等离子体暴露表面上的膜积累产生颗粒的结构。 该组件可以是电感耦合等离子体反应器的窗口，其中窗口包括织构化的氧化钇涂层。 可以通过使等离子体暴露的表面与具有有效的砂粒尺寸的抛光垫接触以提供1至2微米的深度的交叉划痕来提供纹理。

公开(公告)号：US09337002B2

公开(公告)日：2016-05-10

申请号：US13796751

申请日：2013-03-12

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: C22C21/00 ,  C23C24/04 ,  B32B15/01 ,  H01J37/32 ,  C22C21/08 ,  C23C28/00 ,  H01J37/00

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

公开(公告)号：US20140272459A1

公开(公告)日：2014-09-18

申请号：US13796751

申请日：2013-03-12

Applicant: LAM RESEARCH CORPORATION

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  C22C21/00 ,  C23C4/12

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。