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1.发明授权Dense oxide coated component of a plasma processing chamber and method of manufacture thereof 有权等离子体处理室的密集氧化物涂层组件及其制造方法公开(公告)号：US09123651B2
公开(公告)日：2015-09-01
申请号：US13851605
申请日：2013-03-27
Applicant: Lam Research Corporation
Inventor： Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
IPC: H01L21/3065 , H01L21/02 , C25D11/02 , C23C16/44
CPC classification number: C25D11/026 , C23C16/4404 , C23C24/00 , C23C28/322 , C23C28/345 , C25D11/04 , C25D11/12 , C25D11/16 , H01L21/02274 , H01L21/3065 , H01L21/67017 , H01L21/67069 , H01L21/78 , Y10T428/12479 , Y10T428/12549 , Y10T428/1259
Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。
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2.发明申请DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF 有权等离子体加工室的氧化涂层组分及其制造方法公开(公告)号：US20140295670A1
公开(公告)日：2014-10-02
申请号：US13851605
申请日：2013-03-27
Applicant: LAM RESEARCH CORPORATION
Inventor： Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
IPC: H01L21/3065 , H01L21/02 , C25D11/02 , H01L21/67
CPC classification number: C25D11/026 , C23C16/4404 , C23C24/00 , C23C28/322 , C23C28/345 , C25D11/04 , C25D11/12 , C25D11/16 , H01L21/02274 , H01L21/3065 , H01L21/67017 , H01L21/67069 , H01L21/78 , Y10T428/12479 , Y10T428/12549 , Y10T428/1259
Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。
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公开(公告)号：US09790582B2
公开(公告)日：2017-10-17
申请号：US14697454
申请日：2015-04-27
Applicant: Lam Research Corporation
Inventor： Chin-Yi Liu , Russell Ormond , Nash W. Anderson , David M. Schaefer
CPC classification number: C23C4/134 , C23C4/06 , C23C4/11 , H01J37/32477 , H01J37/32495 , H01J37/32972 , H01J37/3299 , H01L21/67069 , H01L21/67253 , H01L22/10
Abstract: In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).
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4.发明授权Dense oxide coated component of a plasma processing chamber and method of manufacture thereof 有权等离子体处理室的密集氧化物涂层组件及其制造方法公开(公告)号：US09546432B2
公开(公告)日：2017-01-17
申请号：US14817742
申请日：2015-08-04
Applicant: LAM RESEARCH CORPORATION
Inventor： Hong Shih , Lin Xu , John Michael Kerns , William Charles , John Daugherty , Sivakami Ramanathan , Russell Ormond , Robert G. O'Neill , Tom Stevenson
IPC: C25D11/04 , C25D11/02 , H01L21/3065 , H01L21/02 , C25D11/16 , C25D11/12 , C23C28/00 , C23C24/00 , H01L21/67 , C23C16/44 , H01L21/78
CPC classification number: C25D11/026 , C23C16/4404 , C23C24/00 , C23C28/322 , C23C28/345 , C25D11/04 , C25D11/12 , C25D11/16 , H01L21/02274 , H01L21/3065 , H01L21/67017 , H01L21/67069 , H01L21/78 , Y10T428/12479 , Y10T428/12549 , Y10T428/1259
Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。
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