公开(公告)号：US20240222098A1

公开(公告)日：2024-07-04

申请号：US18396470

申请日：2023-12-26

Applicant: SEMES CO. LTD.

Inventor： Hakgyun Hong

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32935 ,  H01J37/32522 ,  H01L21/67248 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/24585

Abstract: Provided is a chamber temperature control method for controlling a temperature of a chamber that performs processing on a wafer mounted on a support unit by using plasma, the method including: initiating processing on the wafer by using plasma within the chamber, measuring a first fluid temperature when fluid is supplied to the support unit and a second fluid temperature when the fluid is retrieved from the support unit by using a chiller temperature sensor attached to a chiller configured to supply the fluid to the support unit or retrieve the fluid from the support unit through a chiller pipe, determining set temperatures to be compared with reference temperatures of the chamber by determining whether an RF power source for generating the plasma is operating, calculating an error by comparing the set temperatures to the reference temperatures, and adjusting temperatures of heaters.