公开(公告)号：US11798788B2

公开(公告)日：2023-10-24

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Sunggil Kang ,  Sungyong Lim ,  Beomjin Yoo ,  Akira Koshiishi ,  Vasily Pashkovskiy ,  Kwangyoub Heo

IPC: H01L21/3065 ,  H01J37/32 ,  H01J1/02

CPC classification number: H01J37/32596 ,  H01J1/025 ,  H01J37/32009 ,  H01J37/32899

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US10950414B2

公开(公告)日：2021-03-16

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira Koshiishi ,  Kwangyoub Heo ,  Sunggil Kang ,  Beomjin Yoo ,  Sungyong Lim ,  Vasily Pashkovskiy

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/683

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

公开(公告)号：US12105132B2

公开(公告)日：2024-10-01

申请号：US17975202

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

CPC classification number: G01R29/12 ,  H01L21/6833 ,  H01L21/68742 ,  H01L22/12

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US20240304420A1

公开(公告)日：2024-09-12

申请号：US18344307

申请日：2023-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siyoung Koh ,  Hadong Jin ,  Namkyun Kim ,  Seungbo Shim ,  Sungyong Lim ,  Sungyeol Kim

IPC: H01J37/32 ,  G01R27/16

CPC classification number: H01J37/32183 ,  G01R27/16 ,  H01J37/32926 ,  H01J37/32935

Abstract: An apparatus for providing radio frequency (RF) power includes a load having a process chamber, a RF power generator configured to provide the RF power through a cable electrically connected to the load, and a reflected power controller configured to detect reflected power from the load in a delivery mode and configured to control the RF power according to the reflected power that was detected.

公开(公告)号：US12014905B2

公开(公告)日：2024-06-18

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyun Kim ,  Tae-Sun Shin ,  Deokjin Kwon ,  Donghyeon Na ,  Seungbo Shim ,  Sungyong Lim ,  Minjoon Kim ,  Jin Young Bang ,  Bongju Lee ,  Jinseok Lee ,  Sungil Cho ,  Chungho Cho

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01L21/26 ,  H01L21/6831 ,  H01J2237/327

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

公开(公告)号：US11996275B2

公开(公告)日：2024-05-28

申请号：US17942368

申请日：2022-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong Lim ,  Chansoo Kang ,  Youngdo Kim ,  Namkyun Kim ,  Sungyeol Kim ,  Sangki Nam ,  Seungbo Shim ,  Kyungmin Lee

IPC: H01J37/32 ,  G01J1/44

CPC classification number: H01J37/32935 ,  G01J1/44 ,  H01J37/32174 ,  G01J2001/446

Abstract: A diagnostic device for diagnosing distribution of a radical in a plasma processing chamber, the diagnostic device, may include a spectrometer receiving an optical signal through at least one optical channel connected to the plasma processing chamber, and performing spectral analysis on the optical signal in response to a synchronization signal corresponding to each of states of a multi-level pulse applied to the plasma processing chamber and a synchronizer generating the synchronization signal corresponding to each of the states of the multi-level pulse.

公开(公告)号：US12125687B2

公开(公告)日：2024-10-22

申请号：US17709613

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdo Kim ,  Sungyong Lim ,  Daewon Kang ,  Sungyeol Kim ,  Sangki Nam ,  Myunggeun Song ,  Byungkook Cho ,  Hyeoncheol Jin ,  Jonghun Pi

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32183 ,  H01J37/32935 ,  H01J2237/24564 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

公开(公告)号：US20230194591A1

公开(公告)日：2023-06-22

申请号：US17975202

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/687 ,  H01L21/683 ,  H01L21/66

CPC classification number: G01R29/12 ,  H01L21/6833 ,  H01L21/68742 ,  H01L22/12

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US20230187189A1

公开(公告)日：2023-06-15

申请号：US17864541

申请日：2022-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungsub Jung ,  Sungyeol Kim ,  Sungyong Lim ,  Jaehyun Choi ,  Kyungmin Lee ,  Seungkyu Lim

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32935 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32926 ,  C23C16/52 ,  C23C16/509 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J37/32183

Abstract: a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.

公开(公告)号：US20230118000A1

公开(公告)日：2023-04-20

申请号：US17970242

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong Lim ,  Sungyeol Kim ,  Yongwon Cho ,  Younghwan Choi ,  Chunyoon Park ,  Seungbo Shim ,  Hyungjung Yong ,  Jaejoong Lee

IPC: H01J37/32

Abstract: A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.