公开(公告)号：US10795262B2

公开(公告)日：2020-10-06

申请号：US16165567

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Park ,  Sang Ki Nam ,  Kyu-hee Han ,  Jin-ok Kim ,  Jin-hong Park ,  Gwang-we Yoo

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38

Abstract: A method of manufacturing an integrated circuit (IC) device includes exposing a partial region of a photoresist film formed on a main surface of a substrate to generate acid, and diffusing the acid in the partial region of the photoresist film. Diffusing the acid may include applying an electric field, in a direction perpendicular to a direction in which the main surface of the substrate extends, to the photoresist film using an electrode facing the substrate through an electric-field transmission layer filling between the photoresist film and the electrode. The electric-field transmission layer may include an ion-containing layer or a conductive polymer layer.

公开(公告)号：US10522332B2

公开(公告)日：2019-12-31

申请号：US16421433

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongkwang Lee ,  Sunggil Kang ,  Sang Ki Nam ,  Kwangyoub Heo ,  Kyuhee Han

IPC: H01J37/317 ,  H01J37/32 ,  H01L21/683

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

公开(公告)号：US10347468B2

公开(公告)日：2019-07-09

申请号：US15870800

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongkwang Lee ,  Sunggil Kang ,  Sang Ki Nam ,  Kwangyoub Heo ,  Kyuhee Han

IPC: H01J37/32 ,  H01L21/683

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

公开(公告)号：US20190035606A1

公开(公告)日：2019-01-31

申请号：US15867082

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Sang Ki Nam ,  Kwang-Youb Heo ,  Jehun Woo ,  Sang-Heon Lee ,  Masahiko Tomita ,  Vasily Pashkovskiy

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

公开(公告)号：US20250085445A1

公开(公告)日：2025-03-13

申请号：US18633031

申请日：2024-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chansoo Kang ,  Daewon Kang ,  Minju Kim ,  Tae-Hyun Kim ,  Sang Ki Nam ,  Dougyong Sung ,  Jungmo Yang ,  Sejin Oh ,  Keonhee Lim ,  Junho Im

IPC: G01T1/36 ,  G01T1/20 ,  H01L21/67

Abstract: A substrate processing apparatus includes a process chamber providing a process space, a stage located in the process chamber and configured to support a substrate, a window coupled to a side of the process chamber, and a scintillator layer coupled to one side surface of the window. The scintillator layer covers a portion of the one side surface of the window which is less than the full window surface. A second surface corresponding to another portion of the one side surface of the window is exposed. Light emitted by a plasma in the process space passes through the window and is collected by an optical system and analyzed. Ultraviolet light passing through the scintillator is converted to longer wavelength, generally visible, light. Comparing the light passing through the bare window with the light passing through the scintillator layer enables analysis of the plasma.

公开(公告)号：US11798788B2

公开(公告)日：2023-10-24

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Sunggil Kang ,  Sungyong Lim ,  Beomjin Yoo ,  Akira Koshiishi ,  Vasily Pashkovskiy ,  Kwangyoub Heo

IPC: H01L21/3065 ,  H01J37/32 ,  H01J1/02

CPC classification number: H01J37/32596 ,  H01J1/025 ,  H01J37/32009 ,  H01J37/32899

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US11545372B2

公开(公告)日：2023-01-03

申请号：US16421473

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Lu Siqing ,  Won Hyuk Jang ,  Kyu Hee Han

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/10

Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

公开(公告)号：US11107705B2

公开(公告)日：2021-08-31

申请号：US16505488

申请日：2019-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Won Hyuk Jang ,  Kyu Hee Han ,  Young Do Kim ,  Jeong Min Bang

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

公开(公告)号：US10950414B2

公开(公告)日：2021-03-16

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira Koshiishi ,  Kwangyoub Heo ,  Sunggil Kang ,  Beomjin Yoo ,  Sungyong Lim ,  Vasily Pashkovskiy

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/683

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

公开(公告)号：US12272535B2

公开(公告)日：2025-04-08

申请号：US17673903

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Doo Young Gwak ,  Tae Hyun Kim ,  Sang Ki Nam ,  Jae Ho Jang ,  Jin Kyou Choi

IPC: H01J37/32 ,  H01L21/3065

Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.