公开(公告)号：US10410874B2

公开(公告)日：2019-09-10

申请号：US15867082

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Sang Ki Nam ,  Kwang-Youb Heo ,  Jehun Woo ,  Sang-Heon Lee ,  Masahiko Tomita ,  Vasily Pashkovskiy

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

公开(公告)号：US20190035606A1

公开(公告)日：2019-01-31

申请号：US15867082

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Sang Ki Nam ,  Kwang-Youb Heo ,  Jehun Woo ,  Sang-Heon Lee ,  Masahiko Tomita ,  Vasily Pashkovskiy

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.