公开(公告)号：US10566176B2

公开(公告)日：2020-02-18

申请号：US15426672

申请日：2017-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-jin Oh ,  Woong Ko ,  Vasily Pashkovskiy ,  Doug-yong Sung ,  Ki-ho Hwang

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/263 ,  G01N22/00 ,  H01L21/3065 ,  H01L21/67 ,  H01R9/05

Abstract: Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.

公开(公告)号：US20150206716A1

公开(公告)日：2015-07-23

申请号：US14601878

申请日：2015-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNGJOON KIM ,  Vasily Pashkovskiy ,  Sang-Heon Lee ,  Sang-Jean Jeon ,  Doug-Yong Sung ,  Yun-Kwang Jeon ,  Bong-Seong Kim

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/505

CPC classification number: H01J37/32146 ,  C23C16/515 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32183

Abstract: A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times.

Abstract translation: 等离子体发生装置包括：室，其包围与外部隔离的反应空间; 设置在所述室的下部的晶片卡盘; 设置在所述室的上部的等离子体产生单元; 向所述等离子体发生单元提供RF功率的第一射频（RF）电源; 介于所述第一RF电源和所述等离子体产生单元之间的第一匹配单元; 向晶片卡盘提供RF功率的第二RF电源; 以及插入在第二RF电源和晶片卡盘之间的第二匹配单元。 第一RF电源在不同时间提供第一脉冲功率电平和不同的第二脉冲功率电平。

公开(公告)号：US11798788B2

公开(公告)日：2023-10-24

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Sunggil Kang ,  Sungyong Lim ,  Beomjin Yoo ,  Akira Koshiishi ,  Vasily Pashkovskiy ,  Kwangyoub Heo

IPC: H01L21/3065 ,  H01J37/32 ,  H01J1/02

CPC classification number: H01J37/32596 ,  H01J1/025 ,  H01J37/32009 ,  H01J37/32899

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US10950414B2

公开(公告)日：2021-03-16

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira Koshiishi ,  Kwangyoub Heo ,  Sunggil Kang ,  Beomjin Yoo ,  Sungyong Lim ,  Vasily Pashkovskiy

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/683

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

公开(公告)号：US20170069553A1

公开(公告)日：2017-03-09

申请号：US15163876

申请日：2016-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-jin Oh ,  Woong Ko ,  Vasily Pashkovskiy ,  Doug-yong Sung ,  Ki-ho Hwang

IPC: H01L21/66 ,  H01L21/263 ,  H01L21/78

CPC classification number: H01J37/32935 ,  G01N22/00 ,  H01J37/32082 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67253 ,  H01L22/26 ,  H01R9/05

Abstract: Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.

Abstract translation: 本文公开了能够精确检测等离子体工艺中的等离子体状态的微波探测器，包括探针的等离子体监视系统以及使用该系统制造半导体器件的方法。 微波探头包括沿一个方向延伸的主体和连接到主体的一端并具有平板形状的头部。 此外，在等离子体处理中，微波探针非侵入性地联接到腔室，使得头部的表面接触腔室的视口的外表面，并且微波探头通过头部将微波施加到腔室中 并通过头部接收在腔室内产生的信号。

公开(公告)号：US20190035606A1

公开(公告)日：2019-01-31

申请号：US15867082

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Sang Ki Nam ,  Kwang-Youb Heo ,  Jehun Woo ,  Sang-Heon Lee ,  Masahiko Tomita ,  Vasily Pashkovskiy

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

公开(公告)号：US20170148613A1

公开(公告)日：2017-05-25

申请号：US15426672

申请日：2017-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-jin Oh ,  Woong Ko ,  Vasily Pashkovskiy ,  Doug-yong Sung ,  Ki-ho Hwang

IPC: H01J37/32 ,  G01N22/00 ,  H01R9/05 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32935 ,  G01N22/00 ,  H01J37/32082 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67253 ,  H01L22/26 ,  H01R9/05

Abstract: Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.

公开(公告)号：US10410874B2

公开(公告)日：2019-09-10

申请号：US15867082

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Sang Ki Nam ,  Kwang-Youb Heo ,  Jehun Woo ,  Sang-Heon Lee ,  Masahiko Tomita ,  Vasily Pashkovskiy

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

公开(公告)号：US20190122867A1

公开(公告)日：2019-04-25

申请号：US15991500

申请日：2018-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Sunggil Kang ,  Sungyong Lim ,  Beomjin Yoo ,  Akira Koshiishi ,  Vasily Pashkovskiy ,  Kwangyoub Heo

IPC: H01J37/32 ,  H01J1/02

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US09601397B1

公开(公告)日：2017-03-21

申请号：US15163876

申请日：2016-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-jin Oh ,  Woong Ko ,  Vasily Pashkovskiy ,  Doug-yong Sung ,  Ki-ho Hwang

IPC: H01L21/66 ,  H01L21/78 ,  H01L21/263

CPC classification number: H01J37/32935 ,  G01N22/00 ,  H01J37/32082 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67253 ,  H01L22/26 ,  H01R9/05

Abstract: Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.